公开(公告)号：JPH02192127A

公开(公告)日：1990-07-27

申请号：JP31080689

申请日：1989-12-01

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： HIYUN MUU PAKU ,  DON GUU KIMU

IPC: H01L29/812 ,  H01L21/285 ,  H01L21/338 ,  H01L29/417 ,  H01L29/78

Abstract: PURPOSE: To control an interval between a gate electrode and an n -layer by it self by growing the section form of a gate into a T-form with selective chemical gaseous phase growth at the time of forming the gate. CONSTITUTION: A Si thin film 2 formed on a semi-insulated GaAs substrate 1 by a PECVD(Plasma Enhanced Chemical Vapor Deposition) method and a silicon nitride film 3 by a PCVD(Photo Chemical Vapor Deposition) method are used as sealing (capping) films in an activated process. In such a case, the interval between the gate electrode 7 and the n -layer 8 can be controlled by growing tungsten 7 by selective chemical gaseous growth into the T-form at the time of forming the gate. Thus, the process can be simplified.