公开(公告)号：JPH05211171A

公开(公告)日：1993-08-20

申请号：JP4696691

申请日：1991-03-12

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： JIE SHIN RI ,  CHIYORU SUN BOKU ,  DOOJIN KIN ,  JIN YON KAN

IPC: H01L29/812 ,  H01L21/338 ,  H03K17/08

Abstract: PURPOSE: To prevent ion damages in steps for forming a high-melting-point gate and performing dry etching operation. CONSTITUTION: An n-type impurity implantation layer 11a is formed on a GaAs substrate 11, a photoresist film 13 having overhangs 13a are formed thereon, a first high-melting-point material and a second metallic material 15a are sequentially deposited thereon, a gate of a two-layer structure having a first high- melting-point gate 14 and a second metallic gate 15 is defined by a lift-off method, a source/drain region 11b is formed, and then an ohmic contact 17 is formed on the source/drain region 11b.