公开(公告)号：JPH10150207A

公开(公告)日：1998-06-02

申请号：JP30885097

申请日：1997-11-11

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： JIN-IEON KAN ,  JIN-GAN KUU ,  MYUN-SHIN KUWAKU

IPC: H01L27/12 ,  H01L27/06 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To make it possible to prevent the generation of a current short-circuit between a drift region and a source and the generation of a voltage breakdown in the junction between the drift region and a channel region by a method wherein a multitude of vertical gates are formed between the channel region and the drift region. SOLUTION: A first conductivity type drift region 203, a second conductivity type channel region 204 and second insulating films 207 encircling the peripheries of the regions 203 and 204 are formed on a first wafer 200 via a first insulating film 201. A high-concentration first conductivity type drain 213 is formed on the region 203, a high-concentration first conductivity type source 205 is formed on the region 204 and a high-concentration second conductivity type channel region coupling layer 212, which comes into contact with the side on one side of the sides of the source 205, is formed. Moreover, a multitude of vertical gate insulating films 208 and a multitude of vertical gate electrodes 209a are formed in contact with the other side of the source 205 and the regions 203 and 204. A horizontal gate insulating film 210 and a horizontal gate electrode 211 are formed on the upper parts of the electrodes 209a in such a way as to come into contact with the source 205 and the region 204.