公开(公告)号：JPH08222723A

公开(公告)日：1996-08-30

申请号：JP31925495

申请日：1995-12-07

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KIN KEIGIYOKU ,  JIYO GOUKIYOU

IPC: H01L29/68 ,  H01L29/06 ,  H01L29/737 ,  H01L29/772

Abstract: PROBLEM TO BE SOLVED: To lessen the positional change of the restriction energy level within a quantum well and the change of the width of energy by interposing a quantum-well layer between shock absorbing layers, and gentling the inclination of the energy band of a quantum well layer being changed by an applied voltage. SOLUTION: A connector potential barrier layer 35 of quantum-well structure is made on the first shock absorbing layer 15, and thereon the second shock- absorbing layer 19 not doped with impurities is made. This can prevent it from inclining suddenly, when specified base-emitter voltage or collector-emitter voltage is applied and the energy band of a collector potential barrier layer 17 inclines. Accordingly, the positional change of the quantum restricting energy level within the quantum well, constituting the collector potential barrier layer 17 and the change of the width of energy, can be made small. Moreover, the NDR region of a current-voltage property curve is not fixed and can be adjusted by the combination of voltage and a current-voltage property curve, which has an acute NDR, can be obtained.