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    MANUFACTURE OF SELF-ALIGNING TRANSISTOR USING AMORPHOUS SILICON
    1.
    发明专利
    MANUFACTURE OF SELF-ALIGNING TRANSISTOR USING AMORPHOUS SILICON 失效

    公开(公告)号：JPH0283934A

    公开(公告)日：1990-03-26

    申请号：JP31400188

    申请日：1988-12-14

    Applicant: KOREA ELECTRONICS TELECOMM

    Inventor： YU HIYON KIYU ,  KAN SAN UON ,  I JIN HIYO

    IPC: H01L29/73 ,  H01L21/203 ,  H01L21/225 ,  H01L21/263 ,  H01L21/28 ,  H01L21/285 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/331 ,  H01L29/08 ,  H01L29/68 ,  H01L29/732

    Abstract: PURPOSE: To enable self-aligned transistors to be enhanced in uniformity of characteristics and prevented from deteriorating with time by a method wherein the removal of a natural oxide film and the evaporation of an amorphous silicon are carried out at the same time in a vacuum, and a titanium/second amorphous silicon layer is evaporated on a first amorphous silicon layer. CONSTITUTION: A natural oxide film 111 is removed from a P-type intrinsic base 104 through an argon gas sputtering method so as to make the surface 115 of the base 104 clean, a first amorphous silicon layer 116 is deposited on the cleaned surface of the base 104 in a vacuum, impurities are diffused in the surface of the amorphous silicon layer 116 through a thermal treatment for the formation of an N-type emitter junction 118 after impurity ions are implanted. Then, a formed oxide film 117 is removed by argon gas sputtering to make the surface 119 of the silicon layer 116 clean, a titanium film 120 and a second amorphous silicon layer 121 are evaporated on the amorphous silicon layer 116, impurity ions are implanted, and a titanium silicide layer 122 is formed through a thermal treatment. By this constitution, an emitter is lessened in contact resistance, a transistor of this constitution can be prevented from becoming unstable in characteristics and deteriorating in quality with time, furthermore an emitter junction is made stable in depth, and a sheet resistance can be lessened.

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