公开(公告)号：JPH10178198A

公开(公告)日：1998-06-30

申请号：JP30884897

申请日：1997-11-11

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KAN-HO PAKU ,  JEON-SOOKU HA

IPC: H01L31/04 ,  H01L31/07 ,  H01L31/108

Abstract: PROBLEM TO BE SOLVED: To make low the density of the state of a surface energy in a metal- semiconductor optical element to raise the absorption efficiency of light of the optical element by a method wherein a group V element being contained in a monatomic layer is formed as a surface active layer between a semiconductor substrate and a metal layer. SOLUTION: An insulating film 13 is formed on a semiconductor substrate 11 and thereafter, one part of the film 13 is removed and a group V element is deposited on the exposed surface of the substrate 11 as a surface active agent to form thin a surface active layer 10 in the extent of a single atom. A metal thin film 12 is formed on the layer 10 and moreover, after an antireflection film 14 is formed on the thin film 12, electrodes 15, which are electrically linked to the thin film 12, are formed at the side parts of the film 14 and a rear electrode 16 is formed on the rear surface of the substrate 11. Thereby, a dangling bond on the surface of the semiconductor substrate is effectively removed by an single atomic layer consisting of the group V element on the substrate 11, a surface trapping effect due to the state of the surface energy between band gaps is decreased to facilitate the removal of the dangling bond on the element, the state of the surface energy between unnecessary band gaps is decreased and the absorption efficiency of light of the element can be raised.