公开(公告)号：JPH08148507A

公开(公告)日：1996-06-07

申请号：JP31538794

申请日：1994-12-19

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： RI KEIKOU ,  BEI INKEI ,  KATA HIROKI ,  KIN KEISHIYU

IPC: H01L29/812 ,  H01L21/285 ,  H01L21/335 ,  H01L21/338

Abstract: PURPOSE: To contribute to high-density integration by reducing a gap between a gate and an ohmic electrode and by reducing a source resistance of a component. CONSTITUTION: Insulation films 104, 105 are vapor-deposited on the surface of a substrate at a first temperature (T1) and a second temperature (T2) (T1>T2), and dry etching is made selectively. Since the second insulation layer 105, which forms an upper layer, has a higher etching rate than the first insulation layer 104 which forms a lower layer, when etching of the first insulation layer 104 is completed and a portion of the substrate which corresponds to a gate is exposed, an excessive etching of the side faces of the second insulation film 105 is started to define a T-shaped space. A T-shaped gate electrode is formed using this space.