公开(公告)号：JP2002203986A

公开(公告)日：2002-07-19

申请号：JP2001249171

申请日：2001-08-20

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KIM GYUNG-OCK ,  KIM IN KYU ,  PYUN KWANG EUI

IPC: H01L27/15 ,  H01L31/0216 ,  H01L31/0352 ,  H01L31/107

Abstract: PROBLEM TO BE SOLVED: To provide a photodetctor in which sensitivity is increased by attaining a high gain and multifunction/novel function can be imparted. SOLUTION: The avalanche photodetector has an emitter light absorption layer 102 between a collector layer C and an emitter layer (top contact layer) E formed on a substrate S wherein two avalanche gain structure layers comprising charge layers 103 and 107, amplification layers 104 and 108 and an electron contact layer 105 are formed between the light absorption layer 102 and the collector layer C.