公开(公告)号：JP2002289543A

公开(公告)日：2002-10-04

申请号：JP2001392750

申请日：2001-12-25

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KIM JEONG SOO ,  CHO HO SUNG ,  LEE KYU-SEOK

IPC: C30B25/02 ,  C30B25/18 ,  H01L21/20 ,  H01L21/205 ,  H01S5/026

Abstract: PROBLEM TO BE SOLVED: To grow a semiconductor epitaxial layer so that epitaxial growth characteristics can be made different for each growing portion by one time epitaxial growth. SOLUTION: This method is provided with a first step for growing a bridge- shaped dielectric membrane on a semiconductor wafer for producing a semiconductor integrated element, and a second step for growing the epitaxial layer having epitaxial growth characteristics different for each growing portion on the semiconductor wafer. By controlling the width and interval of the bridge- shaped dielectric membrane, the growing speed and thickness of the epitaxial layer to be grown are controlled. Even by one time epitaxial growth, the epitaxial layer having epitaxial growth characteristics different for each growing portion is grown.