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公开(公告)号：EP1776723A4
公开(公告)日：2009-08-05
申请号：EP05774226
申请日：2005-08-05
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： PARK NAE MAN , KIM KYUNG HYUN , KIM TAE YOUB , SUNG GUN YONG
IPC: H01L33/38
CPC classification number: H01L33/38
Abstract: Provided is a semiconductor light emitting diode, in which a plurality of upper electrodes is formed on a surface of an upper doping layer or an emission layer and at least one lower electrode is formed on a surface of a lower doping layer or a substrate in a silicon-based light emitting diode or a nitride-based light emitting diode to enhance a spreading characteristic of current applied to the electrodes, thereby maximizing an emitting area of the emission layer and inducing an emission having a uniform intensity on an entire surface of the emission layer to further enhance the luminous efficiency of the light emitting diode.
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公开(公告)号：EP1820223A4
公开(公告)日：2012-02-08
申请号：EP05821410
申请日：2005-12-07
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： KIM KYUNG HYUN , PARK RAE MAN , KIM TAE YOUB , SUNG GUN YONG
CPC classification number: H01L33/42 , H01L33/32 , H01L51/52 , H01L51/5206
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3.发明公开SILICON NITRIDE LAYER FOR LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE USING THE SAME, AND METHOD OF FORMING SILICON NITRIDE LAYER FOR LIGHT EMITTING DEVICE 审中-公开氮化硅用于光发射器件中，发光器件及其制造方法的硅氮化物FOR A LIGHT-EMITTING DEVICE
公开(公告)号：EP1807880A4
公开(公告)日：2010-12-29
申请号：EP05820423
申请日：2005-11-04
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： KIM TAE YOUB , PARK NAE MAN , KIM KYUNG HYUN , SUNG GUN YONG
CPC classification number: H01L33/34 , C23C16/30 , C23C16/345 , H01L33/08 , H01L33/18 , Y10S977/773
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