公开(公告)号：JPH10190002A

公开(公告)日：1998-07-21

申请号：JP33266997

申请日：1997-12-03

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KYO CHINEI ,  GU CHINKON ,  KAKU MEISHIN

IPC: H01L29/78 ,  H01L21/336 ,  H01L27/085 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a structure capable of preventing current leakage in an field effect high voltage device of not less than 100V class whose source-drift region-drain using an SOI(silicon on insulator) structure is disposed horizontally. SOLUTION: Included are a vertical isolation trench 101 defining an active region on a substrate 301 having an SOI structure, a vertical isolation trench oxide film 48 formed inside the vertical isolation trench 101, a source 41 and a drift region 43 and a drain 52 formed horizontally in the active region, and a horizontal gate 44 formed on the upper side of the boundary part between the source 41 and the drift region 43. A plurality of vertical trench gate 45 are provided so that they are separated and formed to have a predetermined spacing, they are insulated from the substrate by an oxide film 46, and they are formed to have a predetermined area.

公开(公告)号：JPH10190000A

公开(公告)日：1998-07-21

申请号：JP24041597

申请日：1997-08-21

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KYO CHINEI ,  GU CHINKON ,  KAKU MEISHIN

IPC: H01L29/78 ,  H01L21/336 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To minimize a junction leakage current by electrically isolating a channel region and a stray region using an insulator wall and to enhance the reliability of an element by suppressing the generation of an abnormal current due to impact ionization. SOLUTION: A wall of silicon dioxide electric insulator 44 is formed between a channel region 41 and a stray region 42. Since a part 41a for forming a p-n junction is not present on surfaces other than the surface of the channel region 41 and the stray region 42, leakage current is minimized and ionization through initial collision is prevented. Furthermore, a passage of current flowing into a source 47 is blocked by the insulator 44, and generation of ions due to secondary collisions in the stray region 42 and increase of abnormal current can be suppressed. According to the structure, operational reliability of an element can be enhanced.