公开(公告)号：SG143122A1

公开(公告)日：2008-06-27

申请号：SG2007089683

申请日：2007-09-28

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KIM SANG HYEOB ,  LEE SUN YOUNG ,  MAENG SUNG LYUL ,  MYOUNG HEY JIN

Abstract: METHOD OF FORMING OXIDE-BASED NANO-STRUCTURED MATERIAL Provided is a method of forming an oxide-based nano-structured material including growing a nano- structured material using a nano-nucleus having the same composition as the desired oxide-based nano- structured material. A solution is coated on a substrate, the solution including: an organic precursor containing M which is a transition metal or a semi metal; and an organic solvent in which the organic precursor is dissolved. A nano-nucleus having a composition of MxOy is formed on the substrate by annealing the substrate. A nano-structured material having a composition of MxOy is formed by growing the nano-nucleus while supplying a reaction precursor containing M into the nano-nucleus, and the nano- structured material is annealed.

公开(公告)号：GB2444586A

公开(公告)日：2008-06-11

申请号：GB0718766

申请日：2007-09-26

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： MYOUNG HEY JIN ,  KIM SANG HYEOB ,  LEE SUN YOUNG ,  MAENG SUNG LYUL

IPC: B82B3/00 ,  C23C16/56

Abstract: A method of forming an oxide-based nano-structured material by growing a nano-structured material using a nano-nucleus having the same composition as the desired oxide-based nano-structured material. A solution is coated on a substrate by dipping, spin or spray coating. The solution includes an organic precursor containing a transition metal or a semi metal and an organic solvent in which the organic precursor is dissolved. A metal oxide nano-nucleus is then formed on the substrate by annealing the substrate. A metal oxide nano-structured material is formed by growing the nano-nucleus while supplying a reaction precursor containing the same metal as the formed oxide into the nano-nucleus. Methods used for this step include PVD, CVD and sol gel processes. The nano-structured material is finally annealed. The structure can be used in an electronic device such as a diode, a display, FET, SET or a battery.

公开(公告)号：EP1869642A4

公开(公告)日：2011-06-29

申请号：EP06747358

申请日：2006-04-13

Applicant: KOREA ELECTRONICS TELECOMM ,  IUCF HYU

Inventor： CHANG EUN YOUNG ,  HUR NAM HO ,  LEE SOO IN ,  JANG EUEE SEON ,  KIM DAI YONG ,  MIN BYEONG WOOK ,  LEE SUN YOUNG

IPC: G06T9/20 ,  G06T17/20 ,  H03M7/00 ,  H04N7/26

CPC classification number: G06T9/001 ,  H04N19/46 ,  H04N19/70