公开(公告)号：DE4445568C2

公开(公告)日：2002-11-28

申请号：DE4445568

申请日：1994-12-20

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： SONG YOON-HO ,  PARK KYUNG-HO ,  NAM KEE-SOO

IPC: H01L21/20 ,  H01L21/336 ,  H01L29/786

Abstract: A process for formation of a thin film transistor which can be usefully applied to a high picture quality active matrix liquid crystal display is disclosed. Particularly, a process for formation of an improved polysilicon thin film transistor is disclosed. In the process for formation of a polysilicon thin film transistor, the solid phase crystallization of a non-crystalline silicon is carried out under a high pressure oxygen atmosphere, and therefore, the solid phase crystallization time for a non-crystalline silicon is shortened so as to improve the productivity, and the grain size of the polysilicon is made more uniform so as improve the electrical characteristics of the TFT (thin film transistor).

公开(公告)号：DE4445568A1

公开(公告)日：1996-06-27

申请号：DE4445568

申请日：1994-12-20

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： SONG YOON-HO ,  PARK KYUNG-HO ,  NAM KEE-SOO

IPC: H01L21/20 ,  H01L21/336 ,  H01L29/786

Abstract: The non-crystalline, silicon layer in heat treated under high pressure in an O2 atmos. in an electric furnace for a solid phase crystallisation and oxidation, forming a good polysilicon and an oxide layer. The two layers are structured and a transistor active region in defined. On a gate layer side walls are formed side wall oxide layers, just as on the side walls of the polysilicon layer of the defined active region. A gate electrode is formed at a suitable position of the gate oxide layer. Then follows an ion implantation, using the gate electrode as a mask, to form a source/drain region on the active one. Final metallising forms metal electrodes.