公开(公告)号：JP2000089054A

公开(公告)日：2000-03-31

申请号：JP29736998

申请日：1998-10-19

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： RI SANKAN ,  SHU KANSHU ,  KO NAN ,  SONG MIN-KYU

IPC: H01L31/00 ,  G02B6/122 ,  G02B6/13 ,  G02B6/136 ,  G02B6/30 ,  G02B6/36 ,  G02B6/42 ,  H01L27/12

Abstract: PROBLEM TO BE SOLVED: To minimize alignment error of transcription and to realize a manufacturing method of a substrate for a hybrid optical integrated circuit provided with an antireflection film which is optimized to a cross section of an optical waveguide. SOLUTION: The manufacturing method of a substrate for a hybrid optical integrated circuit has the first step in which a SOI slab 55 is formed by selatively etching a silicon layer of a SOI wafer, the second step in which silicon nitride films 57, 58 and an antietching film are formed on an upper part of the SOI wafer, the third step in which single crystal silicon of the slab is exposed by etching and a V-groove etched window 64 for aligning optical fiber and a mark 62 for aligning optical element are formed, the fourth step in which a SOI rib is formed by etching the exposed single crystal silicon layer, the fifth step in which the antietching film and the silicon nitride films 57, 58 are removed, the sixth step in which a cladding layer of the optical waveguide is formed on a surface of the SOI slab 55, the seventh step in which the V-groove for aligning the optical fiber is formed by anisotropically etching the silicon substrate exposed to the V-groove etched window 64 for aligning the optical fiber, and the eighth step in which the antietching film in a region adjacent to both end faces of the SOI slab 55 is removed to expose the silicon nitride film.