公开(公告)号：JPH0845965A

公开(公告)日：1996-02-16

申请号：JP11756695

申请日：1995-05-16

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： RI SHIYOURAN ,  KIN KAISEN ,  BUN SAIKIYOU ,  BOKU KIYOUBO

IPC: H01L29/812 ,  H01L21/338 ,  H01L21/76 ,  H01L21/8252 ,  H01L29/10 ,  H01L29/45

Abstract: PURPOSE: To make it possible to prevent flowing of a parasitic carrier in an interface between a substrate and a buffer layer into a channel layer. CONSTITUTION: First GaAs buffer layer 10A without being doped is formed on a semi-insulation GaAs substrate 70, a superlattice layer 80 is formed on the first GaAs buffer layer 10A, the second GaAs buffer layer 10B made of the same material as the first GaAs buffer layer is formed on the superlattice layer 80 without being doped, a channel layer 20 is formed on the second GaAs buffer layer 10B, and a surface protection film 30 is formed on the channel layer 20.