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公开(公告)号:FR2728355B1
公开(公告)日:1998-02-13
申请号:FR9514165
申请日:1995-11-30
Applicant: KOREA ELECTRONICS TELECOMM
Inventor: SIM JAE GI , SIN JUNG UK , CHUNG MYOUNG YOUNG , CHOI TAE GOO
Abstract: The present invention relates to a method for fabricating the plane waveguide path type of the heater buried optical switch, and it exposes the thin film heater removing the second clad layer to speed the heat radiation of the thin film heater by forming flatly the first clad layer having the thin thickness of about 5-10 mu m on the channel waveguide path on which the channel waveguide path is formed on the lower clad layer, and forming the second upper clad layer in the thickness of about 15-20 mu m on the first clad layer and the thin film heater after the thin heater having the line width of about two times as compared with these of the channel waveguide path is formed at the channel waveguide path and the corresponding portion on the first upper clad layer. Therefore, the crosstalk between the neighboring channel waveguides can be protected since the heat generated in the thin film heater inhibits to transmit the neighboring channel waveguide paths, and the switch velocity accelerates as speeding the heat transmitting velocity, and it can operate at the low operational power.
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公开(公告)号:FR2728355A1
公开(公告)日:1996-06-21
申请号:FR9514165
申请日:1995-11-30
Applicant: KOREA ELECTRONICS TELECOMM
Inventor: SIM JAE GI , SIN JUNG UK , CHUNG MYOUNG YOUNG , CHOI TAE GOO
Abstract: The lower layer (13) is a phosphosilicate glass of thickness between 18 and 22 micrometres and the waveguides (15) is a germanophosphate glass of thickness between 6 and 8 micrometres. The concentration in these layers is then increased by heat treatment. A mask is formed on the waveguide and it is chemically attacked by a tetrafluoromethane and trifluoromethane mixture. The upper layer is a 10 to 18 micrometre layer of borophosphosilicate glass, including the waveguides and the heating element (21) has a thickness between 0.1 and 0.2 micrometres with a width of 12 to 16 micrometres in titanium and tantalum. These are overlaid by a second upper layer (23) of borophosphosilicate of 15 to 20 micrometres thickness.
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