公开(公告)号：US20240158254A1

公开(公告)日：2024-05-16

申请号：US18508127

申请日：2023-11-13

Applicant: KOREA INSTITUTE OF CERAMIC ENGINEERING AND TECHNOLOGY

Inventor： Si Young BAE ,  Seong Min JEONG ,  Yun Ji SHIN ,  Myung Hyun LEE

IPC: C01G15/00 ,  C30B35/00

CPC classification number: C01G15/00 ,  C30B35/007 ,  C30B15/34

Abstract: The present invention relates to a powder for growing a gallium oxide single crystal and a method of manufacturing the same, and the powder for growing a gallium oxide single crystal according to an embodiment of the present invention is made of gallium oxide and has a bulk density of 0.7 g/cm3 or more and 1.0 g/cm3 or less.