Abstract:
The present disclosure relates to a Se or S based thin film solar cell and a method for fabricating the same, which may improve the structural and electrical characteristics of an upper transparent electrode layer by controlling a structure of a lower transparent electrode layer in a thin film solar cell having a Se or S based light absorption layer. In the Se or S based thin film solar cell having a light absorption layer and a front transparent electrode layer, the front transparent electrode layer comprises a lower transparent electrode layer and an upper transparent electrode layer, and the lower transparent electrode layer comprises an oxide-based thin film obtained by blending an impurity element into a mixed oxide in which Zn oxide and Mg oxide are mixed (also, referred to as an ‘impurity-doped Zn—Mg-based oxide thin film’).
Abstract:
The present invention relates to a flexible photoelectrode and a manufacturing method thereof, and a dye-sensitized solar cell using the same. More particularly, the present invention relates to a flexible photoelectrode capable of forming a semiconductor electrode with excellent photoelectric conversion efficiency on a plastic substrate at low temperatures in a simple and stable manner, in which it is prepared by forming a nanocrystalline metal oxide layer calcined at high temperature on a high temperature resistant substrate, and transferring it to a flexible transparent substrate by a transfer method using an HF solution, and a flexible dye-sensitized solar cell comprising the same.