公开(公告)号：US20200152426A1

公开(公告)日：2020-05-14

申请号：US16476574

申请日：2018-01-09

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jung Man DOH ,  Young Jun CHOI ,  Jin Kook YOON ,  Seung Hee HAN ,  Byung Yong YU

IPC: H01J37/32 ,  C25D7/00 ,  C25D9/04 ,  H01L21/67

Abstract: A method for forming a coating layer on a metal base material for a semiconductor reactor according to an aspect of the present invention comprises the steps of: immersing a metal base material for a semiconductor reactor in an aqueous alkaline electrolyte solution containing NaOH and NaAlO2; and connecting an electrode to the metal base material and supplying power to the electrode to form a coating layer on the metal base material through a plasma electrolytic oxidation (PEO) method.