Abstract:
Disclosed are a method for preparing pure graphene using chemical bonding between graphite oxide and a metal oxide nanoparticle, graphene prepared thereby, and a nanoparticle having a quasi metal oxide-graphene core-shell structure. The disclosed method for preparing graphene is advantageous in that the source materials are inexpensive, chemical bonding and separation can be achieved through the simple acid treatment process, and the processing facility does not require high cost since the reaction can be performed at low temperature. Furthermore, pure graphene with less defect can be produced quickly in large quantities because the processing time is short.
Abstract:
Disclosed is a method of preparing metal oxide semiconductor-nanocarbon core-shell consolidated quantum dots by chemically linking nanocarbon having superior electrical properties to a metal oxide semiconductor and a method of fabricating a UV photovoltaic cell device by using the same. In case of applying such a new type of quantum dots to a photovoltaic cell as a light absorbing layer, the rate of electron flow is accelerated and that of hole flow is inhibited. Thus, the methods of the present invention can prepare the core-shell consolidated quantum dots having excellent power conversion efficiency and the photovoltaic cell using the same.
Abstract:
Disclosed is a method of preparing metal oxide semiconductor-graphene core-shell quantum dots by chemically linking graphenes with superior electrical properties to a metal oxide semiconductor, and a method of fabricating a light emitting diode by using the same. The light emitting diode according to the present invention has the advantages that it shows excellent power conversion efficiency, the cost for materials and equipments required for its fabrication can be reduced, its fabricating process is simple, and it is possible to mass-produce and enlarge the size of display based on a quantum dot light emitting diode. Further, the present invention relates to core-shell quantum dots that can be used in fabricating a light emitting diode with a different wavelength by using various multi-component metal oxide semiconductors and a fabricating method thereof.