公开(公告)号：US20200269210A1

公开(公告)日：2020-08-27

申请号：US16646144

申请日：2018-09-27

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Ka Hyun HUR ,  Min Seok KIM

IPC: B01J20/22 ,  B01J20/30 ,  B01J20/28

Abstract: Disclosed are amorphous nanostructure and methods of making amorphous nanostructure. The amorphous nanostructure has a transition metal and a halogen element in the main chain, and the transition metal has an oxidation number of +1. In addition, the inorganic polymer forming the amorphous nanostructure forms hydrogen bonding with an adjacent inorganic polymer. The side chain of the inorganic polymer for hydrogen bonding has hydrogen and elements for hydrogen bonding. Through this, various characteristics can be confirmed.

公开(公告)号：US20210197267A1

公开(公告)日：2021-07-01

申请号：US17059214

申请日：2019-01-25

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Ka Hyun HUR ,  Min Seok KIM

IPC: B22F9/24 ,  B22F1/00

Abstract: Disclosed are: a metal nanostructure having a diameter of 2 nm to 2.5 nm; and a manufacturing method therefor. The formed metal nanostructure is provided as approximately spherical single-crystalline nanoparticles or amorphous alloy nanoparticles. Besides, a nanostructure fabricated in the form of an oxide has a nanoneedle shape. For formation of the metal nanostructure, an amorphous nanostructure is used. A second metal element having a higher standard reduction potential than a central metal constituting the amorphous nanostructure is used in the synthesis of the metal nanostructure.

公开(公告)号：US20240180043A1

公开(公告)日：2024-05-30

申请号：US18511720

申请日：2023-11-16

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Seung Hyub BAEK ,  Min Seok KIM ,  Ji-Soo JANG ,  Sunghoon HUR ,  Jungho YOON ,  Hyun-Cheol SONG ,  Seong Keun KIM ,  Ji-Won CHOI ,  Jin Sang KIM ,  Chong Yun KANG

IPC: H10N39/00

CPC classification number: H10N39/00

Abstract: Disclosed is a heterojunction semiconductor flexible substrate in which an epitaxial oxide thin film layer is hetero-bonded to a thinned silicon substrate using a metal layer, a manufacturing method thereof, and the heterojunction semiconductor flexible substrate can be applied to sensor, actuator, transducer, or micro electro mechanical systems (MEMS) device using high functionality of the epitaxial oxide thin film layer of high quality as well as an electronic and/or optical device.

公开(公告)号：US20210178477A1

公开(公告)日：2021-06-17

申请号：US17269529

申请日：2019-01-25

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Ka Hyun HUR ,  Min Seok KIM

IPC: B22F3/26 ,  B22F3/00 ,  B22F1/00 ,  B82B3/00

Abstract: Provided are a composite in which metal nanoparticles are evenly dispersed and adsorbed to pores of a support, and a method of preparing the same. An amorphous nanostructure formed of inorganic polymers having a transition metal and a halogen element as a main chain via hydrogen bonding is used as a chemical template for forming the metal nanoparticles. The formed metal nanoparticles are evenly dispersed and adsorbed to the support with pores.