公开(公告)号：US20180130947A1

公开(公告)日：2018-05-10

申请号：US15407357

申请日：2017-01-17

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jong Hyuk PARK ,  Sang-Soo LEE ,  Keun-Young SHIN ,  Young Jin KIM ,  Min PARK ,  Heesuk KIM ,  Jeong Gon SON ,  Wan Ki BAE

IPC: H01L45/00

CPC classification number: H01L45/1253 ,  G11C11/5685 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/0016 ,  G11C13/003 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0073 ,  G11C2213/52 ,  G11C2213/71 ,  G11C2213/77 ,  H01L27/11 ,  H01L27/2463 ,  H01L45/1233 ,  H01L45/1273 ,  H01L45/16 ,  H01L45/1675

Abstract: Disclosed is a multilevel nonvolatile resistive random-access memory device including a lower electrode, an upper electrode, and an insulation film interposed between the lower electrode and the upper electrode. Each of the lower electrode and the upper electrode includes a plate-shaped portion, and a patterned portion formed on the plate-shaped portion, and the patterned portion includes a protruding 3-dimensional prism structure pattern in which a plurality of prism-shaped structures is repeatedly arranged at a constant interval in a given direction. The patterned portion of the lower electrode and the patterned portion of the upper electrode are arranged to face each other, and a longitudinal direction of the prism-shaped structures of the lower electrode patterned portion and a longitudinal direction of the prism-shaped structures of the upper electrode patterned portion cross each other.

公开(公告)号：US20180291268A1

公开(公告)日：2018-10-11

申请号：US15860902

申请日：2018-01-03

Applicant: SAMSUNG DISPLAY CO., LTD. ,  KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY ,  KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Min Ki NAM ,  Kyoung Won PARK ,  Keun Chan OH ,  Jae Jin LYU ,  Baek Hee LEE ,  Hyeok Jin LEE ,  Jaikyeong KIM ,  Heesuk KIM ,  Wan Ki BAE ,  Doh Chang LEE

IPC: C09K11/88

Abstract: A method of manufacturing a quantum dot, the method including preparing a CdS/CdSe/CdS quantum dot that includes a CdS-containing first core, a CdSe-containing second core, and a CdS-containing shell; forming a Cu2S/Cu2Se/Cu2S quantum dot by injecting the CdS/CdSe/CdS quantum dot into a solution containing a Cu precursor; and forming a ZnS/ZnSe/ZnS quantum dot by injecting the Cu2S/Cu2Se/Cu2S quantum dot into a solution containing a Zn precursor.

公开(公告)号：US20170155044A1

公开(公告)日：2017-06-01

申请号：US15229449

申请日：2016-08-05

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jong Hyuk PARK ,  Sang-Soo LEE ,  Heesuk KIM ,  Jeong Gon SON ,  Wan Ki BAE ,  Keun-Young SHIN ,  Young Jin KIM

IPC: H01L45/00

CPC classification number: H01L45/16 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1273 ,  H01L45/146 ,  H01L45/1616 ,  H01L45/1625

Abstract: Disclosed are nonvolatile resistance random access memory device and a fabrication method thereof. The nonvolatile resistance random access memory device includes a lower electrode, an insulator film formed on a surface of the lower electrode, and an upper electrode formed over the insulator film, the lower electrode includes a base, and a thin metal layer formed on a surface of the base, and the lower electrode has a 3D structural pattern in which a plurality of protruding structures is repeatedly arranged at a constant interval. The 3D metal structures have a shape selected from among a pyramid (quadrangular pyramid), a trapezoidal pyramid (pyramid with a flat top), a pillar, and a prism. Uniform conductive filaments are formed via the space between the 3D metal structures, whereby the nonvolatile resistance random access memory device is capable of being driven at a low operating voltage and has long-term stability.