公开(公告)号：US10240253B2

公开(公告)日：2019-03-26

申请号：US15298367

申请日：2016-10-20

Applicant: KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE

Inventor： ChanYong Hwang

IPC: C30B25/18 ,  H01L29/20 ,  C30B25/08 ,  C30B25/14 ,  C30B25/16 ,  C30B29/38 ,  C30B23/02 ,  C30B29/40

Abstract: A method for manufacturing a large-scale single crystal monolayer of hBN including: preparing a single crystal copper substrate of (111) face in a chemical vapor deposition (CVD) apparatus; removing impurities of the single crystal copper substrate of (111) face; forming a plurality of hBN crystal seeds by depositing a vaporized ammonia borane or a vaporized borazine on the surface of the single crystal copper substrate from which the impurities are removed; and forming a large-scale single crystal monolayer of hBN grown by mutual coherence between the hBN crystal seeds, an apparatus for manufacturing the same, and a substrate for a monolayer UV graphene growth using the same.