公开(公告)号：US20170009371A1

公开(公告)日：2017-01-12

申请号：US15103368

申请日：2014-12-26

Applicant: KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE

Inventor： Chanyong HWANG

IPC: C30B1/08 ,  C30B29/02 ,  C23C16/26 ,  C01B31/04

CPC classification number: C30B1/08 ,  C01B32/186 ,  C01B32/194 ,  C01B2204/20 ,  C23C16/26 ,  C30B29/02

Abstract: The present invention provides a method for manufacturing a monocrystalline graphene layer, comprising the steps of: forming polycrystalline graphene on a substrate by using a hydrocarbon gas to grow a graphene layer aligned on a wafer-scale insulator substrate in one direction like a monocrystal; forming a catalyst on the polycrystalline graphene; and recrystallizing the polycrystalline graphene to monocrystalline graphene by heat-treating the polycrystalline graphene and the catalyst.

Abstract translation: 本发明提供一种制造单晶石墨烯层的方法，包括以下步骤：通过使用烃气体在基板上形成多晶石墨烯，以在单晶方向上生长在晶片级绝缘体基板上排列的石墨烯层; 在多晶石墨烯上形成催化剂; 并通过热处理多晶石墨烯和催化剂将多晶石墨烯再结晶成单晶石墨烯。

公开(公告)号：US20170162274A1

公开(公告)日：2017-06-08

申请号：US15325827

申请日：2015-01-16

Applicant: KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE

Inventor： Kyoungwoong MOON ,  Chanyong HWANG

IPC: G11C19/08

CPC classification number: G11C19/0808 ,  G11B5/02 ,  G11C11/161 ,  G11C11/1675 ,  G11C19/0816 ,  G11C19/085 ,  H01L27/105

Abstract: The present invention provides a method for controlling a magnetic domain wall of a magnetic structure and a magnetic memory device using same. The method includes: a first step of applying a first magnetic field in a first direction to a magnetic structure having a plurality of magnetic domains and a magnetic domain wall between the magnetic domains, and applying a second magnetic field in a second direction to the magnetic structure, the first direction being parallel to the magnetization direction of the magnetic domain wall and the second direction being parallel to the magnetization direction of the magnetic domain wall; and a second step of applying a third magnetic field in a direction opposite to the first direction to the magnetic structure and applying a fourth magnetic field in a direction opposite to the second direction to the magnetic structure, wherein the magnetic domain wall can be moved uniformly in a direction parallel to the magnetization direction of the magnetic domain wall or the magnetization direction of the magnetic domains.