公开(公告)号：US09834855B2

公开(公告)日：2017-12-05

申请号：US15103368

申请日：2014-12-26

Applicant: KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE

Inventor： Chanyong Hwang

IPC: C30B25/02 ,  C30B1/08 ,  C23C16/26 ,  C01B31/04 ,  C30B29/02

CPC classification number: C30B1/08 ,  C01B32/186 ,  C01B32/194 ,  C01B2204/20 ,  C23C16/26 ,  C30B29/02

Abstract: The present invention provides a method for manufacturing a monocrystalline graphene layer, comprising the steps of: forming polycrystalline graphene on a substrate by using a hydrocarbon gas to grow a graphene layer aligned on a wafer-scale insulator substrate in one direction like a monocrystal; forming a catalyst on the polycrystalline graphene; and recrystallizing the polycrystalline graphene to monocrystalline graphene by heat-treating the polycrystalline graphene and the catalyst.

公开(公告)号：US09905310B2

公开(公告)日：2018-02-27

申请号：US15325827

申请日：2015-01-16

Applicant: KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE

Inventor： Kyoungwoong Moon ,  Chanyong Hwang

IPC: G11C19/08 ,  G11C11/14

CPC classification number: G11C19/0808 ,  G11B5/02 ,  G11C11/161 ,  G11C11/1675 ,  G11C19/0816 ,  G11C19/085 ,  H01L27/105

Abstract: The present invention provides a method for controlling a magnetic domain wall of a magnetic structure and a magnetic memory device using same. The method includes: a first step of applying a first magnetic field in a first direction to a magnetic structure having a plurality of magnetic domains and a magnetic domain wall between the magnetic domains, and applying a second magnetic field in a second direction to the magnetic structure, the first direction being parallel to the magnetization direction of the magnetic domain wall and the second direction being parallel to the magnetization direction of the magnetic domain wall; and a second step of applying a third magnetic field in a direction opposite to the first direction to the magnetic structure and applying a fourth magnetic field in a direction opposite to the second direction to the magnetic structure, wherein the magnetic domain wall can be moved uniformly in a direction parallel to the magnetization direction of the magnetic domain wall or the magnetization direction of the magnetic domains.