公开(公告)号：US10147789B2

公开(公告)日：2018-12-04

申请号：US15317922

申请日：2014-06-25

Applicant: KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE

Inventor： Woo Lee ,  Jeong Ho Shin

IPC: H01L29/06 ,  H01L21/306 ,  H01L29/20 ,  B82B3/00 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/3063 ,  H01L21/308

Abstract: The present invention relates to a method for manufacturing a GaAs semiconductor nanowire in a bottom-up type and, more particularly, to a method for manufacturing a vertically-aligned gallium arsenide semiconductor nanowire array in a large area by applying a voltage and a current from the outside using a metal thin film, which has been made through an economical method of fabricating a mesh-type metal thin film in a large area, as an anode such that holes (h+) are injected into a gallium arsenide substrate, thereby inducing a wet etching process continuously. The obtained vertically-aligned gallium arsenide semiconductor nanowire of a large area can be applied to fabrication of nanoelements, such as a solar cell, a transistor, and a light-emitting diode.