公开(公告)号：US12216026B2

公开(公告)日：2025-02-04

申请号：US17840335

申请日：2022-06-14

Applicant: Khalifa University of Science and Technology

Inventor： Baker Mohammad ,  Khaled Muneer Mutlaq Humood ,  Maguy Abi Jaoude ,  Sueda Saylan

IPC: G01M3/32 ,  G01M3/34 ,  H10N70/00

Abstract: Techniques for measuring vacuum pressure using a memristor element are described. A vacuum sensor can include a memristor element having a semiconductor substrate, a memristive material layer, and a conductive electrode. The off-state resistance of the memristor element can be sensitive to changes in ambient pressure at the element. The off-state resistance of the memristor element may also exhibit a well-defined increase at pressures below a threshold pressure. Measurement of the off-state resistance may be obtained with low power consumption and without changing the resistance or switching the state of the memristor element. The measurements may be used to both determine a leak rate of the ambient pressure within the volume of interest and determine if the sensor is exposed to vacuum pressure below the threshold pressure.