公开(公告)号：US20170001858A1

公开(公告)日：2017-01-05

申请号：US14790378

申请日：2015-07-02

Applicant: Kionix, Inc.

Inventor： Scott G. ADAMS ,  Charles W. BLACKMER

IPC: B81B7/00 ,  B81C1/00 ,  H01L21/306 ,  H01L21/768 ,  H01L23/48 ,  H01L23/532

CPC classification number: B81B7/007 ,  B81B2207/096 ,  B81C1/00301 ,  B81C2201/013 ,  H01L21/30604 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/5329

Abstract: Disclosed are systems, methods, and computer program products for electronic systems with through-substrate interconnects and mems device. An interconnect formed in a substrate having a first surface and a second surface, the interconnect includes: a bulk region; a via extending from the first surface to the second surface; an insulating structure extending through the first surface into the substrate and defining a closed loop around the via, wherein the insulating structure comprises a seam portion separated by at least one solid portion; and an insulating region extending from the insulating structure toward the second surface, the insulating region separating the via from the bulk region, wherein the insulating structure and insulating region collectively provide electrical isolation between the via and the bulk region.

Abstract translation: 公开了用于具有贯穿衬底互连和mems器件的电子系统的系统，方法和计算机程序产品。 形成在具有第一表面和第二表面的基底中的互连，所述互连包括：体区域; 从第一表面延伸到第二表面的通孔; 绝缘结构，其延伸穿过所述第一表面进入所述基底并围绕所述通孔限定闭合环，其中所述绝缘结构包括由至少一个实心部分分开的接缝部分; 以及从所述绝缘结构朝向所述第二表面延伸的绝缘区域，所述绝缘区域将所述通孔与所述主体区域分离，其中所述绝缘结构和绝缘区域共同地提供所述通孔和所述主体区域之间的电隔离。