Abstract:
Scatterometry overlay (SCOL) measurement methods, systems and targets are provided to enable efficient SCOL metrology with in-die targets. Methods comprise generating a signal matrix by: illuminating a SCOL target at multiple values of at least one illumination parameter, and at multiple spot locations on the target, wherein the illumination is at a NA (numerical aperture) >1/3 yielding a spot diameter
Abstract:
A metrology system includes an image device and a controller. The image device includes a spectrally-tunable illumination device and a detector to generate images of a sample having metrology target elements on two or more sample layers based on radiation emanating from the sample in response to illumination from the spectrally-tunable illumination device. The controller determines layer-specific imaging configurations of the imaging device to image the metrology target elements on the two or more sample layers within a selected image quality tolerance in which each layer-specific imaging configuration includes an illumination spectrum from the spectrally-tunable illumination device. The controller further receives one or more images of the metrology target elements on the two or more sample layers generated using the layer-specific imaging configurations. The controller further provides a metrology measurement based on the one or more images of the metrology target elements on the two or more sample layers.
Abstract:
A method of monitoring overlay is used in a manufacturing process in which successive layers are deposited one over another to form a stack. Each layer may include a periodic structure such as a diffraction grating to be aligned with a periodic structure in another layer. The stacked periodic structures may be illuminated to form + and - first order diffraction patterns from the periodic structures. An image of the stacked periodic structures may be captured including + and - diffraction patterns. The + and - diffraction patterns may be compared to calculate the overlay between successive layers.
Abstract:
Metrology measurement methods and tools are provided, which illuminate a stationary diffractive target by a stationary illumination source, measure a signal composed of a sum of a zeroth order diffraction signal and a first order diffraction signal, repeat the measuring for a plurality of relations between the zeroth and the first diffraction signals, while maintaining the diffractive target and the illumination source stationary, and derive the first order diffraction signal from the measured sums. Illumination may be coherent and measurements may be in the pupil plane, or illumination may be incoherent and measurements may be in the field plane, in either case, partial overlapping of the zeroth and the first diffraction orders are measured. Illumination may be annular and the diffractive target may be a one cell SCOL target with periodic structures having different pitches to separate the overlap regions.
Abstract:
Metrology tools and methods are provided, which estimate the effect of topographic phases corresponding to different diffraction orders, which result from light scattering on periodic targets, and adjust the measurement conditions to improve measurement accuracy. In imaging, overlay error magnification may be reduced by choosing appropriate measurement conditions based on analysis of contrast function behavior, changing illumination conditions (reducing spectrum width and illumination NA), using polarizing targets and/or optical systems, using multiple defocusing positions etc. On-the-fly calibration of measurement results may be carried out in imaging or scatterometry using additional measurements or additional target cells.
Abstract:
An overlay metrology tool providing site-by-site alignment includes a controller coupled to a telecentric imaging system. The controller may receive two or more alignment images of an overlay target on a sample captured at two or more focal positions by the imaging system, generate alignment data indicative of an alignment of the overlay target within the imaging system based on the alignment images, set the alignment images as measurement images when the alignment of the overlay target is within selected alignment tolerances, direct the imaging system to adjust the alignment of the overlay target in the imaging system and further receive one or more measurement images from the imaging system when the alignment of the overlay target is outside the selected alignment tolerances, and determine overlay between two or more layers of the sample based on at least one of the measurement images.
Abstract:
A method of monitoring overlay is used in a manufacturing process in which successive layers are deposited one over another to form a stack. Each layer may include a periodic structure such as a diffraction grating to be aligned with a periodic structure in another layer. The stacked periodic structures may be illuminated to form + and - first order diffraction patterns from the periodic structures. An image of the stacked periodic structures may be captured including + and - diffraction patterns. The + and - diffraction patterns may be compared to calculate the overlay between successive layers.
Abstract:
Systems and methods are provided which utilize optical microcavity probes to map wafer topography by near-field interactions therebetween in a manner which complies with high volume metrology requirements. The optical microcavity probes detect features on a wafer by shifts in an interference signal between reference radiation and near-field interactions of radiation in the microcavities and wafer features, such as device features and metrology target features. Various illumination and detection configurations provide quick and sensitive signals which are used to enhance optical metrology measurements with respect to their accuracy and sensitivity. The optical microcavity probes may be scanned at a controlled height and position with respect to the wafer and provide information concerning the spatial relations between device and target features.
Abstract:
Metrology methods and systems are provided, in which the detected image is split at a field plane of the collection path of the metrology system's optical system into at least two pupil plane images. Optical elements such as prisms may be used to split the field plane images, and multiple targets or target cells may be measured simultaneously by spatially splitting the field plane and/or the illumination sources and/or by using two polarization types. The simultaneous capturing of multiple targets or target cells increases the throughput of the disclosed metrology systems.
Abstract:
Methods are provided, which estimate a quality of a metrology target by calculating a noise metric of its ROI kernels, derived from application of a Fourier filter on the measured kernel with respect to a periodicity of the target's periodic structure(s); and using the calculated noise metric to indicate the target quality. An additional Fourier filter may be applied perpendicularly on the measured kernel with respect to a periodicity of a perpendicular segmentation of the periodic structure(s), and the (2D) noise metric may be derived by application of both Fourier filters. The estimated noise may be analyzed statistically to provide various types of information on the target.