公开(公告)号：WO2019035854A1

公开(公告)日：2019-02-21

申请号：PCT/US2017/064955

申请日：2017-12-06

Applicant: KLA-TENCOR CORPORATION

Inventor： AMIT, Eran

IPC: G06F17/50 ,  G06N99/00

Abstract: Metrology methods and targets are provided, that expand metrological procedures beyond current technologies into multi-layered targets, quasi-periodic targets and device-like targets, without having to introduce offsets along the critical direction of the device design. Machine learning algorithm application to measurements and/or simulations of metrology measurements of metrology targets are disclosed for deriving metrology data such as overlays from multi-layered target and corresponding configurations of targets are provided to enable such measurements. Quasi-periodic targets which are based on device patterns are shown to improve the similarity between target and device designs. Offsets are introduced only in non-critical direction and/or sensitivity is calibrated to enable, together with the solutions for multi-layer measurements and quasi-periodic target measurements, direct device optical metrology measurements.

公开(公告)号：WO2014201396A1

公开(公告)日：2014-12-18

申请号：PCT/US2014/042366

申请日：2014-06-13

Applicant: KLA-TENCOR CORPORATION

Inventor： VOLKOVICH, Roie ,  AMIT, Eran ,  AMIR, Nuriel ,  ADEL, Michael E.

IPC: H01L21/66

CPC classification number: G05B19/048 ,  G03F7/0002 ,  G03F7/70625 ,  G05B2219/33285 ,  H01L22/12 ,  H01L22/20

Abstract: Methods and metrology tool modules embodying the methods are provided. Methods comprise measuring characteristics of intermediate features such as guiding lines in a directed self-assembly (DSA) process, deriving exposure parameters from the measured characteristics; and adjusting production parameters for producing consecutive target features according to the derived exposure parameters. The methods and modules enhance the accuracy of the DSA-produced structures and related measurements.

Abstract translation: 提供了体现方法的方法和计量工具模块。 方法包括测量中间特征的特征，例如定向自组装（DSA）过程中的引导线，从测量的特征导出曝光参数; 并根据导出的曝光参数调整生产连续目标特征的生产参数。 这些方法和模块提高了DSA生产的结构和相关测量的准确性。

公开(公告)号：WO2019118306A1

公开(公告)日：2019-06-20

申请号：PCT/US2018/064641

申请日：2018-12-10

Applicant: KLA-TENCOR CORPORATION

Inventor： GUTMAN, Nadav ,  AMIT, Eran ,  EYRING, Stefan ,  PATHANGI SRIRAMAN, Hari ,  LASKE, Frank ,  POHLMANN, Ulrich ,  HEIDRICH, Thomas

IPC: G03F7/20 ,  G01N21/84 ,  H01L21/66 ,  H01L21/67

Abstract: An overlay metrology system includes a particle-beam metrology tool to scan a particle beam across an overlay target on a sample including a first-layer target element and a second-layer target element. The overlay metrology system may further include a controller to receive a scan signal from the particle-beam metrology tool, determine symmetry measurements for the scan signal with respect to symmetry metrics, and generate an overlay measurement between the first layer and the second layer based on the symmetry measurements in which an asymmetry of the scan signal is indicative of a misalignment of the second-layer target element with respect to the first-layer target element and a value of the overlay measurement is based on the symmetry measurements.

公开(公告)号：WO2019045780A1

公开(公告)日：2019-03-07

申请号：PCT/US2018/026157

申请日：2018-04-05

Applicant: KLA-TENCOR CORPORATION

Inventor： PELED, Einat ,  AMIT, Eran ,  SVIZHER, Alexander ,  LAMHOT, Yuval ,  SELLA, Noga ,  CHENG, Wei-Te Aaron

IPC: H01L21/66

Abstract: Methods applicable in metrology modules and tools are provided, which enable adjusting metrology measurement parameters with respect to process variation, without re-initiating metrology recipe setup. Methods comprise, during an initial metrology recipe setup, recording a metrology process window and deriving baseline information therefrom, and during operation, quantifying the process variation with respect to the baseline information, and adjusting the metrology measurement parameters within the metrology process window with respect to the quantified process variation. The quick adjustment of metrology parameters avoids metrology-related process delays and releases prior art bottlenecks related thereto. Models of effects of various process variation factors on the metrology measurements may be used to enhance the derivation of required metrology tuning and enable their application with minimal delays to the production process.

公开(公告)号：WO2014194095A1

公开(公告)日：2014-12-04

申请号：PCT/US2014/040030

申请日：2014-05-29

Applicant: KLA-TENCOR CORPORATION

Inventor： AMIT, Eran ,  YOHANAN, Raviv

IPC: G01N21/47 ,  G01N21/84 ,  G01N11/00 ,  G06T7/00

CPC classification number: G01N21/4785 ,  G01N21/47 ,  G01N21/9501 ,  G01N2201/02 ,  G01N2201/12 ,  G03F7/70633 ,  G03F7/70683

Abstract: Metrology targets, design files, and design and production methods thereof are provided. The targets comprise two or more parallel periodic structures at respective layers, wherein a predetermined offset is introduced between the periodic structures, for example, opposite offsets at different parts of a target. Quality metrics are designed to estimate the unintentional overlay from measurements of a same metrology parameter by two or more alternative measurement algorithms. Target parameters are configured to enable both imaging and scatterometry measurements and enhance the metrology measurements by the use of both methods on the same targets. Imaging and scatterometry target parts may share elements or have common element dimensions. Imaging and scatterometry target parts may be combined into a single target area or may be integrated into a hybrid target using a specified geometric arrangement.

Abstract translation: 提供了计量目标，设计文件及其设计和制作方法。 目标在相应的层上包括两个或更多个平行的周期性结构，其中在周期性结构之间引入预定的偏移，例如，在目标的不同部分处的相反的偏移。 质量度量被设计为通过两个或更多个替代测量算法从相同测量参数的测量中估计无意重叠。 目标参数被配置为启用成像和散射测量，并通过在同一目标上使用这两种方法来增强计量测量。 成像和散射目标部分可以共享元素或具有共同的元素维度。 成像和散射目标部分可以组合成单个目标区域，或者可以使用指定的几何排列集成到混合目标中。

公开(公告)号：WO2020106335A1

公开(公告)日：2020-05-28

申请号：PCT/US2019/045039

申请日：2019-08-05

Applicant: KLA-TENCOR CORPORATION

Inventor： MANASSEN, Amnon ,  PASKOVER, Yuri ,  AMIT, Eran

IPC: G01B11/27 ,  G01B9/02 ,  G01N21/47 ,  G03F7/20 ,  G01N21/956

Abstract: Scatterometry overlay (SCOL) measurement methods, systems and targets are provided to enable efficient SCOL metrology with in-die targets. Methods comprise generating a signal matrix by: illuminating a SCOL target at multiple values of at least one illumination parameter, and at multiple spot locations on the target, wherein the illumination is at a NA (numerical aperture) >1/3 yielding a spot diameter

公开(公告)号：WO2019118039A1

公开(公告)日：2019-06-20

申请号：PCT/US2018/052333

申请日：2018-09-24

Applicant: KLA-TENCOR CORPORATION

Inventor： AMIT, Eran ,  MANASSEN, Amnon ,  GUTMAN, Nadav

IPC: G01B11/27 ,  G01N21/47 ,  G01N21/956 ,  G03F7/20 ,  H01L23/544

Abstract: Metrology targets designs, design methods and measurement methods are provided, which reduce noise and enhance measurement accuracy. Disclosed targets comprise an additional periodic structure which is orthogonal to the measurement direction along which given target structures are periodic. For example, in addition to two or more periodic structures along each measurement direction in imaging or scatterometry targets, a third, orthogonal periodic structure may be introduced, which provides additional information in the orthogonal direction, can be used to reduce noise, enhances accuracy and enables the application of machine learning algorithms to further enhance accuracy. Signals may be analyzed slice-wise with respect to the orthogonal periodic structure, which can be integrated in a process compatible manner in both imaging and scatterometry targets.

公开(公告)号：WO2018089190A1

公开(公告)日：2018-05-17

申请号：PCT/US2017/058121

申请日：2017-10-24

Applicant: KLA-TENCOR CORPORATION

Inventor： ITTAH, Naomi ,  GUTMAN, Nadav ,  AMIT, Eran ,  IMMER, Vincent ,  PELED, Einat

IPC: H01L21/66

Abstract: A method of overlay control in silicon wafer manufacturing comprises firstly locating a target comprising a diffraction grating on a wafer layer; and then measuring the alignment of patterns in successive layers of the wafer. The location of the target may be done by the pupil camera rather than a vision camera by scanning the target to obtain pupil images at different locations along a first axis. The pupil images may comprise a first order diffraction pattern for each location. A measurement of signal intensity in the first order diffraction pattern is then obtained for each location. The variation of signal intensity with location along each axis is then analyzed to calculate the location of a feature in the target.

Abstract translation: 在硅晶片制造中的覆盖控制的方法包括首先将包括衍射光栅的目标定位在晶片层上; 然后测量晶片连续层中图案的排列。 目标的位置可以由瞳孔相机而不是视觉相机通过扫描目标以获得沿着第一轴的不同位置处的瞳孔图像来完成。 瞳孔图像可以包括用于每个位置的一阶衍射图案。 然后针对每个位置获得一阶衍射图案中的信号强度的测量结果。 然后分析信号强度随每个轴的位置变化，以计算目标中的特征位置。

公开(公告)号：WO2015031337A1

公开(公告)日：2015-03-05

申请号：PCT/US2014/052670

申请日：2014-08-26

Applicant: KLA-TENCOR CORPORATION

Inventor： AMIT, Eran ,  BOMZON, Zeev ,  BRINGOLTZ, Barak ,  EFRATY, Boris

IPC: G01B11/24 ,  G01B9/02 ,  G06F17/10

CPC classification number: G01N21/8851 ,  G01N21/47 ,  G03F7/70633

Abstract: Metrology methods and respective software and module are provided, which identify and remove measurement inaccuracy which results from process variation leading to target asymmetries. The methods comprise identifying an inaccuracy contribution of process variation source(s) to a measured scatterometry signal (e.g., overlay) by measuring the signal across a range of measurement parameter(s) (e.g., wavelength, angle) and targets, and extracting a measurement variability over the range which is indicative of the inaccuracy contribution. The method may further assume certain functional dependencies of the resulting inaccuracy on the target asymmetry, estimate relative donations of different process variation sources and apply external calibration to further enhance the measurement accuracy.

Abstract translation: 提供了计量方法和各自的软件和模块，其识别和消除由过程变化导致的目标不对称性的测量不准确度。 所述方法包括通过测量跨越测量参数（例如波长，角度）和目标的范围的信号来识别过程变化源对测量的散射测量信号（例如覆盖）的不准确贡献，并且提取 在范围内的测量变异性表示不准确的贡献。 该方法可以进一步假设所得到的不准确性对目标不对称性的某些功能依赖性，估计不同过程变化源的相对捐赠并应用外部校准以进一步提高测量精度。

公开(公告)号：EP3779598A3

公开(公告)日：2021-04-14

申请号：EP20177915.4

申请日：2012-04-04

Applicant: Kla-Tencor Corporation

Inventor： KANDEL, Daniel ,  COHEN, Guy ,  KLEIN, Dana ,  LEVINSKI, Vladimir ,  SAPIENS, Noam ,  SHULMAN, Alex ,  KAMENETSKY, Vladimir ,  AMIT, Eran ,  VAKSHTEIN, Irina

IPC: G03F7/20

Abstract: The present invention may include acquiring a plurality of overlay metrology measurement signals from a plurality of metrology targets distributed across one or more fields of a wafer of a lot of wafers, determining a plurality of overlay estimates for each of the plurality of overlay metrology measurement signals using a plurality of overlay algorithms, generating a plurality of overlay estimate distributions, and generating a first plurality of quality metrics utilizing the generated plurality of overlay estimate distributions, wherein each quality metric corresponds with one overlay estimate distribution of the generated plurality of overlay estimate distributions, each quality metric a function of a width of a corresponding generated overlay estimate distribution, each quality metric further being a function of asymmetry present in an overlay metrology measurement signal from an associated metrology target.