公开(公告)号：EP3002996A1

公开(公告)日：2016-04-06

申请号：EP15191835.6

申请日：2012-06-01

Applicant: Korea Basic Science Institute

Inventor： YOO, Suk Jae ,  KIM, Seong Bong

IPC: H05H1/46 ,  H01L21/205 ,  C23C16/50 ,  H01J37/32 ,  H01J37/34

Abstract: The present invention is about a neutral particle beam source for producing a high density plasma in high vacuum and a thin film deposition system employing said neutral particle beam source,
According to the present invention, the plasma is generated by using microwave through the microwave irradiating equipment and a magnetic field by more than one pair of belt type magnets and the high density plasma can be accomplished by maximizing the plasma confinement effect inducing an electron returning trajectory in accordance with the above continuous structure of the belt type magnet in combination with the microwave irradiating equipment.

Abstract translation: 本发明涉及一种用于在高真空中制造高密度等离子体的中性粒子束源和采用所述中性粒子束源的薄膜沉积系统。根据本发明，通过使用微波通过微波照射设备产生等离子体 并且通过多于一对带式磁体的磁场和高密度等离子体可以通过根据带式磁体的上述连续结构最大化引起电子返回轨迹的等离子体约束效应与微波照射 设备。

公开(公告)号：EP2720518A2

公开(公告)日：2014-04-16

申请号：EP12797155.4

申请日：2012-06-01

Applicant: Korea Basic Science Institute

Inventor： YOO, Suk Jae ,  KIM, Seong Bong

IPC: H05H1/34 ,  H01L21/205 ,  C23C16/50

CPC classification number: H01J37/32669 ,  C23C14/354 ,  C23C14/357 ,  C23C14/54 ,  H01J37/32192 ,  H01J37/3266 ,  H01J37/34 ,  H05H2001/4607

Abstract: The present invention is about plasma generation source and a thing that is in its application and it is for getting high quality thin film by generating even high density plasma in high vacuum and like this plasma generation source applying like this plasma generation source to sputtering system, neutral particle beam source, thin film deposition system combining sputtering system and neutral particle beam source,
According to the present invention, it generates plasma by using microwave through the microwave irradiating equipment and magnetic field by more than one pair of the belt type magnets and above goal can be accomplished maximizing plasma confinement effect by inducing electron returning trajectory in accordance with above continuous structure on belt type magnet.

Abstract translation: 本发明涉及等离子体发生源及其应用，并且是通过在高真空中产生均匀的高密度等离子体而获得高品质的薄膜，并且像这样的等离子体发生源像溅射系统一样， 中性粒子束源，组合溅射系统和中性粒子束源的薄膜沉积系统根据本发明，通过使用微波通过微波照射设备和磁场产生等离子体，通过多于一对的带式磁体及以上 可以通过根据带式磁体上的连续结构诱导电子返回轨迹来实现目标的最大化等离子体约束效应。

公开(公告)号：EP2720518B1

公开(公告)日：2016-12-28

申请号：EP12797155.4

申请日：2012-06-01

Applicant: Korea Basic Science Institute

Inventor： YOO, Suk Jae ,  KIM, Seong Bong

IPC: H05H1/46 ,  H01L21/205 ,  C23C16/50 ,  H01J37/32 ,  H01J37/34

CPC classification number: H01J37/32669 ,  C23C14/354 ,  C23C14/357 ,  C23C14/54 ,  H01J37/32192 ,  H01J37/3266 ,  H01J37/34 ,  H05H2001/4607

公开(公告)号：EP3210475A1

公开(公告)日：2017-08-30

申请号：EP15852309.2

申请日：2015-10-22

Applicant: Korea Basic Science Institute

Inventor： MOK, Young Sun ,  TRINH, Quang Hung ,  YOO, Suk Jae

IPC: A23B7/015

CPC classification number: A23B7/015 ,  H01J37/32036 ,  H01J37/32348 ,  H01J37/32844 ,  H05H1/24

Abstract: The present invention relates to an ethylene disposal apparatus comprising: a plasma discharge part having an inlet and an outlet and being filled with an adsorbent; and an electrode part for generating plasma inside the plasma discharge part, wherein the adsorbent has a catalyst supported thereon. The present invention relates to an ethylene disposal method using the ethylene disposal apparatus, the method comprising the steps of: (a) injecting ethylene-containing gas into a plasma discharge part filled with the adsorbent; (b) applying voltage to the electrode part and generating plasma in the plasma discharge part, thereby degrading the injected ethylene; and (c) cooling the plasma discharge part.

Abstract translation: 乙烯处理设备技术领域本发明涉及一种乙烯处理设备，其包括：具有入口和出口并填充吸附剂的等离子体排出部分; 以及用于在等离子体排出部分内部产生等离子体的电极部分，其中吸附剂具有负载在其上的催化剂。 本发明涉及使用乙烯处理设备的乙烯处理方法，该方法包括以下步骤：（a）将含乙烯气体注入填充有吸附剂的等离子体排出部分中; （b）向电极部分施加电压并在等离子体放电部分产生等离子体，从而降低注入的乙烯; 和（c）冷却等离子体放电部件。

公开(公告)号：EP3210475B1

公开(公告)日：2020-12-09

申请号：EP15852309.2

申请日：2015-10-22

Applicant: Korea Basic Science Institute

Inventor： MOK, Young Sun ,  TRINH, Quang Hung ,  YOO, Suk Jae

IPC: A23B7/015 ,  H01J37/32 ,  H05H1/24

公开(公告)号：EP3002996B1

公开(公告)日：2020-03-25

申请号：EP15191835.6

申请日：2012-06-01

Applicant: Korea Basic Science Institute

Inventor： YOO, Suk Jae ,  KIM, Seong Bong

IPC: H05H1/46 ,  H01L21/205 ,  C23C16/50 ,  H01J37/32 ,  H01J37/34

公开(公告)号：EP2690651A1

公开(公告)日：2014-01-29

申请号：EP11861350.4

申请日：2011-05-30

Applicant: Korea Basic Science Institute

Inventor： YOO, Suk Jae ,  KIM, Seong Bong

IPC: H01L21/20 ,  H01L33/32

CPC classification number: H01L21/0257 ,  C30B25/02 ,  C30B25/105 ,  C30B29/406 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02656 ,  H01L21/67161 ,  H01L21/67207 ,  H01L33/0066

Abstract: The present invention relates to an apparatus and method for manufacturing a semiconductor light-emitting device using a neutral particle beam. According to the present invention, since the kinetic energy of the neutral particle beam is provided as a portion of the reaction energy for causing a nitride semiconductor single crystal thin film to be formed on a substrate, and the reaction energy is not provided as heat energy by heating a substrate as in the prior art, the substrate may be treated at a relatively low temperature. Furthermore, elements such as Si, Mg, and the like, which are solid elements required for doping are sprayed onto the substrate from a source which generates solid elements for doping together with the neutral particle beam to achieve high doping efficiency at a lower temperature. According to the present invention, since the substrate is treated at a low temperature, the degradation of the substrate and thin film may be prevented, and the undesired diffusion of the doping elements may be prevented to enable the manufacture of the semiconductor light-emitting device having superior light-emitting properties in a relatively easy manner.

Abstract translation: 本发明涉及的装置和方法，用于使用中性粒子束制造半导体发光器件。 。根据本发明，由于在中性粒子束的动能作为用于使氮化物半导体单晶薄膜上的基片要形成一个反应能量的部分提供，并在反应能量不为热能提供 通过加热基底如在现有技术中，基板可在相对低的温度进行处理。 进一步，元件：如Si，Mg和类似物，它们是嵌入所需固体元件被喷涂在底材上从源哪些基因率与中性粒子束一起掺杂在较低的温度，以实现高掺杂效率的实体单元。 。根据本发明，由于基板是在低温下进行处理，在基板和薄膜的退化可以被防止，并且所述掺杂元素的不期望的扩散可以被防止，以使半导体发光装置的制造 具有相对容易的方式优越的发光特性。