Abstract:
Provided are an infrared photodetector and a method for manufacturing the same. The infrared photodetector includes a bottom contact layer, a light absorption layer stacked on the bottom contact layer, a top contact layer stacked on the light absorption layer, a metal layer stacked on the top contact layer to induce surface plasmon resonance and having a plurality of holes, and a dielectric layer stacked on the metal layer to satisfy an antireflection condition with respect to externally impinging light at a surface plasmon resonance frequency. The dielectric layer is a benzocyclobutene (BCB) layer.
Abstract:
A tandem solar cell includes a substrate a plurality of sub-cells stacked on the substrate and configured to sequentially perform photoelectric conversion with different wavelength band, and a metal disk array disposed on at least one of interfaces between adjacent sub-cells. A center wavelength of wavelength bands corresponding to the sub-cells gradually decreases as progressing downward with respect to an uppermost layer. The metal disk array reflects a light transmitting a sub-cell disposed over the metal disk array without being absorbed therein. The metal disk array is inserted by means of wafer bonding.