公开(公告)号：US06700663B1

公开(公告)日：2004-03-02

申请号：US10248442

申请日：2003-01-21

Applicant: Kun-chih Lin

Inventor： Kun-chih Lin

IPC: G01J400

CPC classification number: H01L21/02686 ,  B23K26/032 ,  G01N21/211 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/2026

Abstract: An amorphous silicon thin film is formed on a substrate first. Then the thin film is irradiated by a laser plus having an irradiation interval along a first direction to re-crystallize the thin film into a polysilicon thin film. A light source is thereafter focused into a micro spot having a diameter smaller than the irradiation interval, and the polysilicon thin film is irradiated by the micro spot moving along the first direction and having a relative moving distance to obtain a spectrum.

Abstract translation: 首先在基板上形成非晶硅薄膜。 然后，通过沿着第一方向具有照射间隔的激光加以照射薄膜，以使薄膜再结晶成多晶硅薄膜。 然后将光源聚焦成直径小于照射间隔的微点，并且通过沿着第一方向移动的微点照射多晶硅薄膜并具有相对移动距离以获得光谱。

公开(公告)号：US07071083B2

公开(公告)日：2006-07-04

申请号：US10604687

申请日：2003-08-11

Applicant: Kun-chih Lin

Inventor： Kun-chih Lin

IPC: H01L21/36 ,  H01L21/20

CPC classification number: H01L21/02686 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2026

Abstract: A method of fabricating a polysilicon film by an excimer laser crystallization process. First, a substrate comprising a first region and a second region is provided. An amorphous silicon layer and a mask layer are formed on the substrate in sequence. Then, a photo-etching process is performed to remove the mask layer in the first region. A heat-retaining capping layer is formed on the mask layer and the amorphous silicon layer. After that, an excimer laser crystallization process is performed so that the amorphous silicon layer in the first region is crystallized into a polysilicon film.

Abstract translation: 通过准分子激光结晶法制造多晶硅膜的方法。 首先，提供包括第一区域和第二区域的基板。 依次在基板上形成非晶硅层和掩模层。 然后，进行光蚀刻处理以去除第一区域中的掩模层。 在掩模层和非晶硅层上形成保温覆盖层。 之后，进行准分子激光结晶处理，使得第一区域中的非晶硅层结晶成多晶硅膜。

公开(公告)号：US06964831B2

公开(公告)日：2005-11-15

申请号：US10604485

申请日：2003-07-25

Applicant: Kun-chih Lin

Inventor： Kun-chih Lin

IPC: G03F9/00 ,  H01L21/20 ,  H01L21/336 ,  H01L23/544 ,  H01L29/786 ,  G03C5/00

CPC classification number: H01L21/02686 ,  G03F9/708 ,  G03F9/7084 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2026 ,  H01L23/544 ,  H01L29/6675 ,  H01L29/78672 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10S430/146 ,  H01L2924/00

Abstract: A method of fabricating a polysilicon film by an excimer laser crystallization process is disclosed. First, a substrate with a first region, a second region surrounding the first region, and a third region is provided. An amorphous silicon film is formed on the substrate. A photo-etching process is performed to remove parts of amorphous silicon film in the third region to form an alignment mark. Then, a mask layer is formed on the amorphous silicon film and a second photo-etching process is performed to remove the mask layer in the first region to expose the amorphous silicon film in the first region. After that, an excimer laser irradiation process is performed so that the amorphous silicon film in the first region is crystallized and becomes a polysilicon film.

Abstract translation: 公开了一种通过准分子激光结晶方法制造多晶硅膜的方法。 首先，提供具有第一区域的基板，围绕第一区域的第二区域和第三区域。 在基板上形成非晶硅膜。 执行光蚀刻工艺以去除第三区域中的非晶硅膜的部分以形成对准标记。 然后，在非晶硅膜上形成掩模层，进行第二光蚀刻工艺以去除第一区域中的掩模层，以暴露第一区域中的非晶硅膜。 之后，进行准分子激光照射处理，使得第一区域中的非晶硅膜结晶化，成为多晶硅膜。