公开(公告)号：DE69732918D1

公开(公告)日：2005-05-04

申请号：DE69732918

申请日：1997-12-22

Applicant: LAM RES CORP

Inventor： SHUFFLEBOTHAM KEVIN ,  MCMILLIN BRIAN ,  DEMOS T ,  NGUYEN HUONG ,  BERNEY BUTCH ,  BEN-DOR MONIQUE

IPC: C23C16/40 ,  C23C16/507 ,  H01L21/316 ,  H01L21/768 ,  C23C16/50

Abstract: A method of depositing a dielectric film on a substrate in a process chamber of an inductively coupled plasma-enhanced chemical vapor deposition reactor. Gap filling between electrically conductive lines on a semiconductor substrate and depositing a cap layer are achieved. Films having significantly improved physical characteristics including reduced film stress are produced by heating the substrate holder on which the substrate is positioned in the process chamber.

公开(公告)号：DE69732918T2

公开(公告)日：2006-04-13

申请号：DE69732918

申请日：1997-12-22

Applicant: LAM RES CORP

Inventor： SHUFFLEBOTHAM KEVIN ,  MCMILLIN BRIAN ,  DEMOS T ,  NGUYEN HUONG ,  BERNEY BUTCH ,  BEN-DOR MONIQUE

IPC: C23C16/40 ,  C23C16/50 ,  C23C16/507 ,  H01L21/316 ,  H01L21/768

Abstract: A method of depositing a dielectric film on a substrate in a process chamber of an inductively coupled plasma-enhanced chemical vapor deposition reactor. Gap filling between electrically conductive lines on a semiconductor substrate and depositing a cap layer are achieved. Films having significantly improved physical characteristics including reduced film stress are produced by heating the substrate holder on which the substrate is positioned in the process chamber.