公开(公告)号：JP2010251768A

公开(公告)日：2010-11-04

申请号：JP2010114452

申请日：2010-05-18

Applicant: Lam Res Corp ,  ラム リサーチ コーポレーションLam Research Corporation

Inventor： HOWALD ARTHUR M ,  HOLLAND JOHN P ,  OLSON CHRISTOPHER

IPC: H01L21/3065 ,  H05H1/00 ,  C23F4/00 ,  H01J7/24 ,  H01J37/32 ,  H01L21/302 ,  H01L21/31 ,  H03H7/40 ,  H05B31/26 ,  H05H1/46

CPC classification number: H03H7/40 ,  H01J37/32082 ,  H01J37/32174

Abstract: PROBLEM TO BE SOLVED: To provide a method for suitably controlling plasma of a plasma processing apparatus. SOLUTION: A tendency for discontinuity to occur in the amount of power reflected back to the high-frequency bias source of a vacuum plasma processor is overcome by controlling the high-frequency bias source output power so that the power delivered to plasma 50 in a vacuum processing chamber remains substantially constant. The high-frequency bias source output power is changed much faster than changes in capacitors of a matching network 108 connecting the high-frequency bias power source to the electrode of a workpiece holder processor. The capacitive impedance component of the plasma is determined by optically measuring the thickness of a plasma sheath in the chamber. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种适当地控制等离子体处理装置的等离子体的方法。 解决方案：通过控制高频偏置源输出功率来克服反射回到真空等离子体处理器的高频偏压源的功率量中的不连续性的趋势，使得输送到等离子体50的功率 在真空处理室中保持基本恒定。 高频偏置源输出功率比连接高频偏置电源与工件支架处理器的电极的匹配网络108的电容器的变化快得多。 通过光学测量腔室中的等离子体护套的厚度来确定等离子体的电容性阻抗分量。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：DE60034321D1

公开(公告)日：2007-05-24

申请号：DE60034321

申请日：2000-02-10

Applicant: LAM RES CORP

Inventor： HOWALD ARTHUR M ,  HOLLAND JOHN P ,  OLSON CHRISTOPHER

IPC: H01J37/32 ,  H05H1/00 ,  C23F4/00 ,  H01J7/24 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H03H7/40 ,  H05B31/26 ,  H05H1/46

Abstract: A tendency for a discontinuity to occur in the amount of power reflected back to an r.f. bias source of a vacuum plasma processor is overcome by controlling the r.f. bias source output power so the power delivered to plasma in a vacuum processing chamber remains substantially constant. The r.f bias source output power is changed much faster than changes in capacitors of a matching network connecting the r.f. bias power source to an electrode of a workpiece holder processor. A capacitive impedance component of the plasma is determined by optically measuring the thickness of a plasma sheath in the chamber.

公开(公告)号：DE60034321T2

公开(公告)日：2007-08-30

申请号：DE60034321

申请日：2000-02-10

Applicant: LAM RES CORP

Inventor： HOWALD ARTHUR M ,  HOLLAND JOHN P ,  OLSON CHRISTOPHER

IPC: H01J37/32 ,  H05H1/00 ,  C23F4/00 ,  H01J7/24 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H03H7/40 ,  H05B31/26 ,  H05H1/46

Abstract: A tendency for a discontinuity to occur in the amount of power reflected back to an r.f. bias source of a vacuum plasma processor is overcome by controlling the r.f. bias source output power so the power delivered to plasma in a vacuum processing chamber remains substantially constant. The r.f bias source output power is changed much faster than changes in capacitors of a matching network connecting the r.f. bias power source to an electrode of a workpiece holder processor. A capacitive impedance component of the plasma is determined by optically measuring the thickness of a plasma sheath in the chamber.