公开(公告)号：WO2005050700A3

公开(公告)日：2005-12-01

申请号：PCT/US2004036746

申请日：2004-11-03

Applicant: LAM RES CORP ,  WAGGANER ERIC ,  ZHU HELEN H ,  LE DANIEL ,  LOEWENHARDT PETER

Inventor： WAGGANER ERIC ,  ZHU HELEN H ,  LE DANIEL ,  LOEWENHARDT PETER

IPC: H01L20060101 ,  H01L21/311 ,  H01L21/4763 ,  H01L21/768

CPC classification number: H01J37/32082 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76802

Abstract: A method for etching a trench (314, Fig. 3B) to a trench depth (318, Fig. 3B) in a dielectric layer (308, Fig. 3B) over a substrate (304, Fig. 3B) is provided. An ARC (310, Fig. 3B) is applied over the dielectric layer (308, Fig. 3B). A photoresist mask (312, Fig. 3B) is formed on the ARC (310, Fig. 3B), where the photoresist mask has a thickness. The ARC is etched through. A trench (314, Fig. 3B) is etched into the dielectric layer with a dielectric to photoresist etch selectivity between 1:1 and 2:1.

Abstract translation: 提供了一种用于在衬底（304，图3B）上的介电层（图3B中的308）蚀刻沟槽（314，图3B）到沟槽深度（318，图3B）的方法。 将ARC（图3B）310施加在电介质层（图3B的308）上。 在ARC（310，图3B））上形成光致抗蚀剂掩模（312，图3B），其中光致抗蚀剂掩模具有厚度。 ARC蚀刻通过。 在介质层中蚀刻具有介于1：1和2：1之间的光致抗蚀剂蚀刻选择性的沟槽（314，图3B）。

公开(公告)号：EP1683194A4

公开(公告)日：2008-06-25

申请号：EP04810317

申请日：2004-11-03

Applicant: LAM RES CORP

Inventor： WAGGANER ERIC ,  ZHU HELEN H ,  LE DANIEL ,  LOEWENHARDT PETER

IPC: H01L21/4763 ,  H01L20060101 ,  H01L21/311 ,  H01L21/768

CPC classification number: H01J37/32082 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76802

Abstract: A method for etching a trench (314, Fig. 3B) to a trench depth (318, Fig. 3B) in a dielectric layer (308, Fig. 3B) over a substrate (304, Fig. 3B) is provided. An ARC (310, Fig. 3B) is applied over the dielectric layer (308, Fig. 3B). A photoresist mask (312, Fig. 3B) is formed on the ARC (310, Fig. 3B), where the photoresist mask has a thickness. The ARC is etched through. A trench (314, Fig. 3B) is etched into the dielectric layer with a dielectric to photoresist etch selectivity between 1:1 and 2:1.

Abstract translation: 提供了用于在衬底（304，图3B）上方的介电层（308，图3B）中蚀刻沟槽（314，图3B）至沟槽深度（318，图3B）的方法。 在介电层（308，图3B）上施加ARC（310，图3B）。 在ARC（310，图3B）上形成光致抗蚀剂掩模（312，图3B），其中光致抗蚀剂掩模具有厚度。 ARC被蚀刻穿过。 用介电材料将沟槽（图3B中的314）蚀刻到介电层中，使光致抗蚀剂蚀刻选择性在1：1和2：1之间。

公开(公告)号：SG191580A1

公开(公告)日：2013-07-31

申请号：SG2013037452

申请日：2009-05-27

Applicant: LAM RES CORP

Inventor： WAGGANER ERIC

Abstract: A disclosed method produces an image of one or more fabricated features by iteratively producing a cross-section of the features. The method includes milling a surface proximate to the one or more fabricated features where the surface being milled is substantially parallel to a layer in which the feature is located. At each milling step, top-down imaging of the one or more fabricated features produces a plurality of cross-sectional images. Each of the plurality of cross-sectional images is reconstructed into a representation of the fabricated feature.