公开(公告)号：JPH1177525A

公开(公告)日：1999-03-23

申请号：JP18677698

申请日：1998-05-28

Applicant: LAM RES CORP ,  KLA TENCOR CORP

Inventor： PECEN JIRI ,  FIELDEN JOHN ,  CHADDA SAKET ,  LACOMB JR LLOYD J ,  JAIRATH RAHUL ,  KRUSSEL WILBUR C

IPC: B24B37/013 ,  B24B49/04 ,  B24D7/12 ,  G01B9/02 ,  G01B11/06 ,  H01L21/304 ,  H01L21/306 ,  H01L21/66 ,  B24B37/04

Abstract: PROBLEM TO BE SOLVED: To provide a chemical and mechanical polishing (CMP) technique using a polishing tool and a thickness monitor to obtain the thickness of a substrate layer. SOLUTION: This invention is concerned with a device and a method monitoring the thickness of a substrate on the spot (work site) using a multiplex wave length spectrometer while chemical and mechanical polishing (CMP) is being processed using a polishing tool and a film thickness monitor 250, and an opening is provided for the tool. Monitoring windows 232 and 242 are fixed to the inside of the opening to form a monitoring channel. The film thickness monitor 250 observes the substrate by way of the monitoring channel so as to allow the film thickness supported over the substrate to be thereby indicated. This information is used for determining the finishing point of a CMP process, determining the quantity of removal in the arbitrarily given circumference of the substrate, determining the average quantity of removal over the whole surface of the substrate, determining the deviation of the quantity of removal over the whole surface of the substrate, and for optimizing the quantity of removal and uniformity. The thickness monitor is provided with a spectrometer.

公开(公告)号：AT222523T

公开(公告)日：2002-09-15

申请号：AT98304212

申请日：1998-05-28

Applicant: LAM RES CORP ,  KLA TENCOR CORP

Inventor： PECEN JIRI ,  FIELDEN JOHN ,  CHADDA SAKET ,  LACOMB JR LLOYD J ,  JAIRATH RAHUL ,  KRUSSEL WILBUR C

IPC: B24B37/013 ,  B24B49/04 ,  B24D7/12 ,  G01B9/02 ,  G01B11/06 ,  H01L21/304 ,  H01L21/306 ,  H01L21/66 ,  B24B37/04