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1.发明授权CRYSTALLIZATION OF GRAIN BOUNDARY PHASES IN SILICON CARBIDE CERAMICS 失效KONG RENZ PHASES IN SILICUMCARBIDKERAMIK的结晶
公开(公告)号：EP0677028B1
公开(公告)日：1996-12-04
申请号：EP94905964.6
申请日：1993-12-28
Applicant: LANXIDE TECHNOLOGY COMPANY, LP
Inventor： MATSUMOTO, Roger Lee Ken
CPC classification number: C04B35/645 , C04B35/573 , C04B35/575 , C04B35/65
Abstract: A silicon carbide ceramic having crystalline grain boundary phases is prepared by heating a composition comprising silicon carbide, a silicate glass and a high metal content transition metal silicide, to a temperature of 1300° to 2100 °C under vacuum until oxygen is removed from the glass as SiO gas, and the glass that remains within the silicon carbide ceramic crystallizes.
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公开(公告)号：EP0677028A1
公开(公告)日：1995-10-18
申请号：EP94905964.0
申请日：1993-12-28
Applicant: LANXIDE TECHNOLOGY COMPANY, LP
Inventor： MATSUMOTO, Roger Lee Ken
IPC: C04B35
CPC classification number: C04B35/645 , C04B35/573 , C04B35/575 , C04B35/65
Abstract: A silicon carbide ceramic having crystalline grain boundary phases is prepared by heating a composition comprising silicon carbide, a silicate glass and a high metal content transition metal silicide, to a temperature of 1300° to 2100 °C under vacuum until oxygen is removed from the glass as SiO gas, and the glass that remains within the silicon carbide ceramic crystallizes.
Abstract translation: 通过在真空中将包含碳化硅，硅酸盐玻璃和高金属含量的过渡金属硅化物的组合物加热至1300℃至2100℃的温度，直至从玻璃中除去氧气来制备具有晶粒晶界相的碳化硅陶瓷 作为一氧化硅气体，以及保留在碳化硅陶瓷内的玻璃结晶。
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