Abstract:
Silicon carbide single crystals are prepared by (1) reacting silica gel, silicic acid or silicon dioxide with an inorganic base and a multifunctional alcohol or a multifunctional phenol to produce a carbon-containing chemically activated silicon compound, (2) mixing the activated silicon compound with carbon black or graphite and (3) heating the mixture to 1300° to 1700°C under a non-oxidizing atmosphere.
Abstract:
Silicon carbide single crystals are prepared by (1) reacting silica gel, silicic acid or silicon dioxide with an inorganic base and a multifunctional alcohol or a multifunctional phenol to produce a carbon-containing chemically activated silicon compound, (2) mixing the activated silicon compound with carbon black or graphite and (3) heating the mixture to 1300 DEG to 1700 DEG C under a non-oxidizing atmosphere.
Abstract:
A sintered silicon nitride ceramic product that has high strength at both ambient and elevated temperatures, good oxidation resistance at high temperatures and retention of strength after exposure to oxidizing conditions contains 1 to 80 wt. % Mo₅Si₃.