Preparation of silicon carbide whiskers
    1.
    发明公开
    Preparation of silicon carbide whiskers 失效
    Herstellung von Siliciumcarbid-Whiskern。

    公开(公告)号:EP0468377A1

    公开(公告)日:1992-01-29

    申请号:EP91112105.1

    申请日:1991-07-19

    CPC classification number: C30B29/36 C30B25/005

    Abstract: Silicon carbide single crystals are prepared by (1) reacting silica gel, silicic acid or silicon dioxide with an inorganic base and a multifunctional alcohol or a multifunctional phenol to produce a carbon-containing chemically activated silicon compound, (2) mixing the activated silicon compound with carbon black or graphite and (3) heating the mixture to 1300° to 1700°C under a non-oxidizing atmosphere.

    Abstract translation: 通过(1)使硅胶,硅酸或二氧化硅与无机碱和多官能醇或多官能苯酚反应以制备含碳化学活化的硅化合物,制备碳化硅单晶,(2)将活化的硅化合物 用碳黑或石墨和(3)在非氧化气氛下将混合物加热至1300至1700℃。

    Preparation of silicon carbide whiskers
    2.
    发明授权
    Preparation of silicon carbide whiskers 失效
    年生产碳化硅晶须。

    公开(公告)号:EP0468377B1

    公开(公告)日:1994-12-21

    申请号:EP91112105.1

    申请日:1991-07-19

    CPC classification number: C30B29/36 C30B25/005

    Abstract: Silicon carbide single crystals are prepared by (1) reacting silica gel, silicic acid or silicon dioxide with an inorganic base and a multifunctional alcohol or a multifunctional phenol to produce a carbon-containing chemically activated silicon compound, (2) mixing the activated silicon compound with carbon black or graphite and (3) heating the mixture to 1300 DEG to 1700 DEG C under a non-oxidizing atmosphere.

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