公开(公告)号：WO2010053217A1

公开(公告)日：2010-05-14

申请号：PCT/KR2008/006503

申请日：2008-11-05

Applicant: LG ELECTRONICS INC.

Inventor： AHN, Junyong ,  KWAG, Gyeayoung ,  CHEONG, Juhwa

IPC: H01L31/042

CPC classification number: H01L31/0684 ,  H01L31/022425 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A silicon solar cell and a method of maπufacturirg the same are disclosed. The silicon solar cell includes a silicon semiconductor substrate doped with first conductive impurities, an emitter layer doped with second conductive impurities having polarities opposite polarities of the first conductive impurities on the substrate, an anti-reflective layer on an entire surface of the substrate, an upper electrode that passes through the anti-reflective layer and is connected to the emitter layer, and a lower electrode connected to a lower portion of the substrate. The emitter layer includes a first emitter layer heavily doped with the second conductive impurities and a second emitter layer lightly doped with the second conductive impurities. A surface resistance of the second emitter layer is 100 Ohm/sq to 120 Ohm/sq.

Abstract translation: 公开了一种硅太阳能电池及其制造方法。 硅太阳能电池包括掺杂有第一导电杂质的硅半导体衬底，掺杂有具有与衬底上的第一导电杂质的极性相反的极性的第二导电杂质的发射极层，在衬底的整个表面上的抗反射层， 上电极穿过抗反射层并连接到发射极层，下电极连接到衬底的下部。 发射极层包括重掺杂有第二导电杂质的第一发射极层和轻掺杂有第二导电杂质的第二发射极层。 第二发射极层的表面电阻为100欧姆/平方至120欧姆/平方。

公开(公告)号：WO2010024522A1

公开(公告)日：2010-03-04

申请号：PCT/KR2009/003295

申请日：2009-06-19

Applicant: LG ELECTRONICS INC. ,  CHEONG, Juhwa ,  AHN, Junyong ,  JEONG, Jiweon ,  PARK, Hyunjung ,  LEE, Seongeun

Inventor： CHEONG, Juhwa ,  AHN, Junyong ,  JEONG, Jiweon ,  PARK, Hyunjung ,  LEE, Seongeun

IPC: H01L31/042

CPC classification number: H01L31/02363 ,  H01L31/02168 ,  H01L31/18 ,  Y02E10/50 ,  Y02E10/52

Abstract: A method of manufacturing a solar cell includes forming jagged portions non-uniformly on a surface of a substrate, forming a first type semiconductor and a second type semiconductor in the substrate, forming a first electrode to contact the first type semiconductor, and forming a second electrode to contact the second type semiconductor. An etchant used in a wet etching process in manufacturing the solar cell includes about 0.5 wt% to 10 wt% of HF, about 30 wt% to 60 wt% of HNO 3 , and up to about 30 wt% of acetic acid based on total weight of the etchant.

Abstract translation: 太阳能电池的制造方法包括在基板的表面上不均匀地形成锯齿状的部分，在基板中形成第一型半导体和第二型半导体，形成与第一型半导体接触的第一电极，形成第二 电极接触第二类型半导体。 在制造太阳能电池的湿式蚀刻工艺中使用的蚀刻剂包括约0.5重量％至10重量％的HF，约30重量％至60重量％的HNO 3和至多约30重量％的基于总重量的乙酸 的蚀刻剂。

公开(公告)号：WO2009102160A2

公开(公告)日：2009-08-20

申请号：PCT/KR2009/000696

申请日：2009-02-13

Applicant: LG ELECTRONICS INC. ,  AHN, Junyong ,  KWAG, Gyeayoung ,  DO, younggu

Inventor： AHN, Junyong ,  KWAG, Gyeayoung ,  DO, younggu

IPC: H01L31/042

CPC classification number: H01L31/0236 ,  H01L31/02168 ,  Y02E10/50

Abstract: A solar cell and a method of texturing a solar cell are disclosed. The method includes coating an ink containing metal particles on a surface of a substrate, drying the ink to attach the metal particles to the surface of the substrate, and differentially etching the surface of the substrate using the metal particles as a catalyst to form an uneven portion.

Abstract translation: 公开了太阳能电池和纹理化太阳能电池的方法。 该方法包括在基材表面上涂覆含有金属颗粒的油墨，干燥油墨以将金属颗粒附着到基材的表面，并使用金属颗粒作为催化剂差异蚀刻基材的表面，以形成不均匀的 一部分。

公开(公告)号：WO2011052875A3

公开(公告)日：2011-05-05

申请号：PCT/KR2010/004600

申请日：2010-07-15

Applicant: LG ELECTRONICS INC. ,  LEE, Younghyun ,  HA, Jungmin ,  AHN, Junyong ,  LEE, Jinhyung

Inventor： LEE, Younghyun ,  HA, Jungmin ,  AHN, Junyong ,  LEE, Jinhyung

IPC: H01L31/042

Abstract: A solar cell and a solar cell module including the solar cells are disclosed. The solar cell includes a substrate of a first conductive type; an emitter layer of a second conductive type positioned at a light receiving surface of the substrate; a plurality of first electrodes that are positioned on the emitter layer and are electrically connected to the emitter layer; and at least one first current collector that is positioned on the emitter layer in a direction crossing the plurality of first electrodes, wherein a thickness of each of the plurality of first electrodes is different from a thickness of the at least one first current collector, and a difference of the thickness of the each first electrode to the thickness of the at least one current collector is equal to or less than about 0.5 times the thickness of the at least one first current collector.

公开(公告)号：EP3910689A1

公开(公告)日：2021-11-17

申请号：EP20738645.9

申请日：2020-01-02

Applicant: LG Electronics Inc.

Inventor： CHANG, Wonjae ,  KIM, Sungjin ,  DO, Younggu ,  CHEONG, Juhwa ,  AHN, Junyong ,  CHO, Haejong ,  KO, Jisoo

IPC: H01L31/0236 ,  H01L31/0368 ,  H01L31/0224 ,  H01L21/306

Abstract: Provided are a method of manufacturing a solar cell, including a polycrystalline silicon layer forming operation of forming a polycrystalline silicon layer containing a first dopant on a back surface of a semiconductor substrate formed of a single crystal silicon material including a base region, a front texturing operation of texturing a front surface of the semiconductor substrate and simultaneously removing the polycrystalline silicon layer formed on the front surface of the semiconductor substrate, a second conductive region forming operation of forming a second conductive region by diffusing a second dopant on the front surface of the semiconductor substrate, a passivation layer forming operation of forming a first passivation layer on the polycrystalline silicon layer formed on the back surface of the semiconductor substrate and forming a second passivation layer on the second conductive region of the front surface of the semiconductor substrate, and an electrode forming operation of forming a first electrode connected to the polycrystalline silicon layer through the first passivation layer and forming a second electrode layer at the second conductive region through the second passivation layer.

公开(公告)号：EP3026713B1

公开(公告)日：2019-03-27

申请号：EP15003390.0

申请日：2015-11-27

Applicant: LG Electronics Inc.

Inventor： HA, Jungmin ,  KIM, Sungjin ,  CHEONG, Juhwa ,  AHN, Junyong ,  CHOI, Hyungwook ,  CHANG, Wonjae ,  KIM, Jaesung

IPC: H01L31/0224 ,  H01L31/0747 ,  H01L31/0216

公开(公告)号：EP3200243A1

公开(公告)日：2017-08-02

申请号：EP17153480.3

申请日：2017-01-27

Applicant: LG ELECTRONICS INC.

Inventor： CHEONG, Juhwa ,  AHN, Junyong ,  CHANG, Wonjae ,  KIM, Jaesung

IPC: H01L31/068 ,  H01L31/0745 ,  H01L31/18

Abstract: A method of manufacturing a solar cell can include forming a silicon oxide film on a semiconductor substrate and successively exposing the silicon oxide film to a temperature in a range of 570°C to 700°C to anneal the silicon oxide film.

Abstract translation: 制造太阳能电池的方法可以包括在半导体衬底上形成氧化硅膜并且连续地将氧化硅膜暴露在570℃至700℃范围内的温度以对氧化硅膜进行退火。

公开(公告)号：EP3358627A1

公开(公告)日：2018-08-08

申请号：EP18154845.4

申请日：2018-02-02

Applicant: LG Electronics Inc.

Inventor： CHO, Haejong ,  OH, Donghae ,  CHEONG, Juhwa ,  AHN, Junyong

IPC: H01L31/0224 ,  C03C3/12 ,  C03C8/18 ,  H01B1/16 ,  H01B1/22

CPC classification number: H01L31/022425 ,  C03C4/14 ,  C03C8/10 ,  C03C8/18 ,  C03C2204/00 ,  C03C2205/00 ,  H01B1/16 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/02363 ,  H01L31/03682 ,  H01L31/068 ,  H01L31/1864 ,  Y02E10/50

Abstract: A solar cell is disclosed. The solar cell includes a first conductive region positioned at a front surface of a semiconductor substrate and containing impurities of a first conductivity type or a second conductivity type, a second conductive region positioned at a back surface of the semiconductor substrate and containing impurities of a conductivity type opposite a conductivity type of impurities of the first conductive region, a first electrode positioned on the front surface of the semiconductor substrate and connected to the first conductive region, and a second electrode positioned on the back surface of the semiconductor substrate and connected to the second conductive region. Each of the first and second electrodes includes metal particles and a glass frit.

公开(公告)号：EP2319091A1

公开(公告)日：2011-05-11

申请号：EP09810127.2

申请日：2009-06-19

Applicant: LG Electronics Inc.

Inventor： CHEONG, Juhwa ,  AHN, Junyong ,  JEONG, Jiweon ,  PARK, Hyunjung ,  LEE, Seongeun

IPC: H01L31/042

CPC classification number: H01L31/02363 ,  H01L31/02168 ,  H01L31/18 ,  Y02E10/50 ,  Y02E10/52

Abstract: A method of manufacturing a solar cell includes forming jagged portions non-uniformly on a surface of a substrate, forming a first type semiconductor and a second type semiconductor in the substrate, forming a first electrode to contact the first type semiconductor, and forming a second electrode to contact the second type semiconductor. An etchant used in a wet etching process in manufacturing the solar cell includes about 0.5 wt% to 10 wt% of HF, about 30 wt% to 60 wt% of HNO
3 , and up to about 30 wt% of acetic acid based on total weight of the etchant.

Abstract translation: 太阳能电池的制造方法包括在基板的表面上不均匀地形成锯齿状的部分，在基板中形成第一型半导体和第二型半导体，形成与第一型半导体接触的第一电极，形成第二 电极接触第二类型半导体。 用于制造太阳能电池的湿蚀刻工艺中的蚀刻剂包括约0.5重量％至10重量％的HF，约30重量％至60重量％的HNO 3，以及至多约30重量％的基于总重量的乙酸 的蚀刻剂。

公开(公告)号：EP3116035B1

公开(公告)日：2018-09-26

申请号：EP16178363.4

申请日：2016-07-07

Applicant: LG ELECTRONICS INC.

Inventor： LEE, Daeyong ,  AHN, Junyong ,  YI, Mann ,  KIM, Jeongkyu

IPC: H01L31/18

CPC classification number: H01L31/03529 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/02363 ,  H01L31/068 ,  H01L31/0684 ,  H01L31/1804 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521

Abstract: Disclosed is method of manufacturing a solar cell including forming a barrier film over at least one surface of a semiconductor substrate or a semiconductor layer, forming a first conductive area on the at least one surface of the semiconductor substrate or the semiconductor layer via ion implantation of a first conductive dopant through the barrier film, and removing the barrier film.