公开(公告)号：US20240128401A1

公开(公告)日：2024-04-18

申请号：US18380110

申请日：2023-10-13

Applicant: LG ELECTRONICS INC.

Inventor： Yangwoo BYUN

IPC: H01L33/00 ,  H01L23/00 ,  H01L33/62

CPC classification number: H01L33/0095 ,  H01L24/95 ,  H01L33/62 ,  H01L2224/95085 ,  H01L2224/95144

Abstract: The embodiment relates to a magnet unit of a semiconductor light emitting device for a display pixel and a self-assembly device using the same. A magnet unit according to an embodiment includes a magnet body and a magnet control unit disposed around an outer circumference of the magnet body. The magnet control unit includes a first magnet focusing unit spaced apart from an outer circumference of the magnet body and a first spacer disposed between the magnet body and the first magnet focusing unit.

公开(公告)号：US20250169235A1

公开(公告)日：2025-05-22

申请号：US18840316

申请日：2022-03-04

Applicant: LG ELECTRONICS INC.

Inventor： Yangwoo BYUN ,  Joodo PARK ,  Chunghyun LIM

IPC: H10H20/819 ,  H10H20/831 ,  H10H29/03 ,  H10H29/49

Abstract: The semiconductor light-emitting element includes a light-emitting portion, a first electrode under the light-emitting portion, a second electrode on the light-emitting portion, a passivation layer surrounding the light-emitting portion, and a first structure surrounding the passivation layer. Since the width is increased by the first structure, the aspect ratio (AR) is reduced, the semiconductor light-emitting element moves without being tilted during self-assembly, so that the assembly defect of semiconductor light-emitting element can be prevented, the assembly rate can be improved, and the assembly speed can be increased.

公开(公告)号：US20230187580A1

公开(公告)日：2023-06-15

申请号：US18077992

申请日：2022-12-08

Applicant: LG ELECTRONICS INC. ,  LG DISPLAY CO., LTD.

Inventor： Yangwoo BYUN ,  Jaeyong AN

IPC: H01L33/38 ,  G09F9/33

CPC classification number: H01L33/38 ,  G09F9/33 ,  H01L33/42

Abstract: The embodiment relates to a display device including a semiconductor light emitting device. A display device including the semiconductor light emitting device according to an embodiment can include a substrate, a first assembly electrode disposed on the substrate, a second assembly electrode branched and disposed above the first assembly electrode, an insulating layer disposed between the first assembly electrode and the second assembly electrode, an assembly barrier wall including a predetermined assembly hole and disposed on the second assembly electrode, and a semiconductor light emitting diode disposed in the assembly hole and electrically connected to the second assembly electrode.

公开(公告)号：US20190153565A1

公开(公告)日：2019-05-23

申请号：US16257864

申请日：2019-01-25

Applicant: LG ELECTRONICS INC.

Inventor： Jinbae KIM ,  Yangwoo BYUN ,  Sanggeun CHO

IPC: C22C12/00 ,  B22F1/00 ,  H01F1/055 ,  H01F1/057 ,  H01F1/059 ,  H01F41/02 ,  C22F1/16 ,  B22F9/04 ,  B22F3/16 ,  B22D11/00 ,  B22F3/087 ,  B22F3/105 ,  B22F3/14 ,  B22F3/15

Abstract: The present invention relates to a method of preparing an anisotropic complex sintered magnet having MnBi, that includes: (a) preparing a non-magnetic phase MnBi-based ribbon by a rapidly solidification process (RSP); (b) heat treating the non-magnetic phase MnBi-based ribbon to convert the non-magnetic phase MnBi-based ribbon into a magnetic phase MnBi-based ribbon; (c) grinding the magnetic phase MnBi-based ribbon to form a MnBi hard magnetic phase powder; (d) mixing the MnBi hard magnetic phase powder with a rare-earth hard magnetic phase powder; (e) magnetic field molding the mixture obtained in step (d) by applying an external magnetic field to form a molded article; and (f) sintering the molded article.

公开(公告)号：US20230299064A1

公开(公告)日：2023-09-21

申请号：US18123738

申请日：2023-03-20

Applicant: LG ELECTRONICS INC. ,  LG Display Co., Ltd.

Inventor： Yangwoo BYUN ,  Jaeyong AN

IPC: H01L25/16 ,  H01L33/62

CPC classification number: H01L25/167 ,  H01L33/62

Abstract: Discussed is a display device including a semiconductor light emitting device. The display device according to the embodiment can include a substrate, a first assembly electrode disposed on the substrate, a second assembly electrode disposed on the first assembly electrode, an insulating layer disposed between the first assembly electrode and the second assembly electrode, a metal layer disposed on the insulating layer and disposed to vertically overlap the first assembly electrode, and an assembly wall having an assembly hole and disposed on the metal layer and the second assembly electrode.

公开(公告)号：US20220102323A1

公开(公告)日：2022-03-31

申请号：US17418066

申请日：2019-10-29

Applicant: LG ELECTRONICS INC.

Inventor： Kyungho LEE ,  Yangwoo BYUN ,  Hooyoung SONG

IPC: H01L25/075 ,  H01L33/60 ,  H01L33/62

Abstract: A light emitting apparatus includes a plurality of wiring electrodes, a plurality of semiconductor light emitting devices connected between two of the plurality of wiring electrodes, and a reflection layer of metal disposed under the plurality of semiconductor light emitting devices, wherein the plurality of wiring electrodes are connected in series with each other by the plurality of semiconductor light emitting devices, and at least one of the plurality of semiconductor light emitting devices is connected between two consecutive wiring electrodes among the plurality of wiring electrodes.

公开(公告)号：US20220037554A1

公开(公告)日：2022-02-03

申请号：US17297874

申请日：2019-12-06

Applicant: LG ELECTRONICS INC.

Inventor： Yangwoo BYUN ,  Hooyoung SONG ,  Kyungho LEE

IPC: H01L33/00 ,  H01L25/075 ,  H01L33/44 ,  H01L33/50 ,  H01L33/62

Abstract: Discussed is a display device and a method for manufacturing same, specifically, to a display device using semiconductor light-emitting elements of a few micrometers to tens of micrometers in size, and includes substrate having a wiring electrode, and a plurality of semiconductor light-emitting elements electrically connected to the wiring electrode, wherein each of the plurality of light-emitting elements includes of a buffer layer and an oxide layer formed on the buffer layer, and the oxide layer includes of an oxide of the buffer layer.

公开(公告)号：US20250081696A1

公开(公告)日：2025-03-06

申请号：US18727264

申请日：2022-01-14

Applicant: LG ELECTRONICS INC. ,  LG DISPLAY CO., LTD.

Inventor： Jaeyong AN ,  Yangwoo BYUN

IPC: H01L33/62 ,  H01L25/16

Abstract: The display device can include a substrate, a first assembling wiring on the substrate, a second assembling wiring on the first assembling wiring, an insulating layer between the first assembling wiring and the second assembling wiring, a partition wall disposed on the second assembling wiring and having an assembly hole, and a semiconductor light-emitting device in the assembly hole. A part of the second assembling wiring can be disposed at a center of the assembly hole, and a width of a part of the second assembling wiring can be smaller than a diameter of the assembly hole.

公开(公告)号：US20230138336A1

公开(公告)日：2023-05-04

申请号：US17978781

申请日：2022-11-01

Applicant: LG ELECTRONICS INC.

Inventor： Seongmin MOON ,  Yangwoo BYUN ,  Kiseong JEON ,  Jinhyung LEE

IPC: H01L33/54 ,  H01L33/38 ,  H01L25/16

Abstract: A display device according to an embodiment can include a first assembly electrode and a second assembly electrode disposed to be spaced apart from each other on a substrate, a first insulating layer disposed on the first assembly electrode and the second assembly electrode, a semiconductor light emitting device having an assembly barrier wall including a predetermined assembly hole and disposed on the first insulating layer, a side electrode electrically connected to a first side surface of the semiconductor light emitting device, and a second panel electrode electrically connected to the second conductivity type semiconductor layer.

公开(公告)号：US20160322134A1

公开(公告)日：2016-11-03

申请号：US15153417

申请日：2016-05-12

Applicant: LG ELECTRONICS INC.

Inventor： Jinbae KIM ,  Yangwoo BYUN

IPC: H01F1/01 ,  B22F3/16 ,  B22F9/04 ,  B22F1/00

Abstract: Disclosed are an MnBi sintered magnet exhibiting excellent thermal stability as well as excellent magnetic characteristics at high temperature, an MnBi anisotropic complex sintered magnet, and a method of preparing the same.

Abstract translation: 公开了具有优异的热稳定性以及高温下的优异磁特性的MnBi烧结磁体，MnBi各向异性复合烧结磁体及其制备方法。