公开(公告)号：EP4064335A1

公开(公告)日：2022-09-28

申请号：EP19953619.4

申请日：2019-11-26

Applicant: LG Electronics Inc.

Inventor： KIM, Soohyun ,  KIM, Dohan ,  CHOI, Wonseok ,  KIM, Youngdo

IPC: H01L23/00 ,  H01L25/075 ,  H01L33/00 ,  H01L33/20 ,  H01L33/36 ,  G01R1/067

Abstract: According to an embodiment of the present invention, the embodiment includes a step (a) introducing semiconductor light emitting devices including a magnetic material into a fluid chamber; a step (b) transferring a substrate extending in one direction and including assembly electrodes covered by an insulating layer and open holes exposing portions of both ends of the assembly electrodes to an assembly position; a step (c) applying a magnetic force to the semiconductor light emitting devices introduced into the fluid chamber to move in one direction; and a step (d) forming an electric field so that the moving semiconductor light emitting devices are disposed at a preset position on the substrate, and wherein in the step (d), a probe pin is in contact with the assembly electrodes exposed through the open holes to individually apply a voltage to the assembly electrodes to form an electric field.

公开(公告)号：EP4024460A1

公开(公告)日：2022-07-06

申请号：EP19943294.9

申请日：2019-08-30

Applicant: LG Electronics Inc.

Inventor： CHUNG, Indo ,  KWON, Jeonghyo ,  KIM, Dohan

IPC: H01L27/15 ,  H01L33/00 ,  H01L33/62

Abstract: ABSTRACT: The present specification provides a new type of a display device in which a wiring process is easily performed after a semiconductor light emitting element having a vertical structure is assembled on a substrate. Here, a semiconductor light emitting device according to an embodiment of the present invention is characterized by comprising: a substrate; a wiring electrode positioned on the substrate; a dielectric film positioned on the wiring electrode; an assembly electrode positioned on the dielectric film; an assembly insulating film positioned on the assembly electrode; a partition wall positioned on the assembly insulting film and defining an assembly groove to which a semiconductor light emitting element is assembled; and the semiconductor light emitting element which is assembled to the assembly groove and provided with conductive electrodes on both ends thereof, wherein the wiring electrode is provided with a protrusion portion, and the protrusion portion protrudes toward the assembly groove and is electrically connected to the conductive electrode on one end of the semiconductor light emitting element.

公开(公告)号：EP4092748A1

公开(公告)日：2022-11-23

申请号：EP20914667.9

申请日：2020-01-21

Applicant: LG Electronics, Inc.

Inventor： PARK, Sungyun ,  KIM, Dohan ,  KIM, Soohyun ,  PARK, Sungmin

IPC: H01L27/15 ,  H01L25/16 ,  H01L33/00

Abstract: A display device of the present invention relates to a structure for bottom emission, comprising: a base part; assembly electrodes which extend in one direction and which are formed on the base part; a dielectric layer formed to cover the assembly electrodes; a barrier rib part which has a plurality of cells, and which is stacked on the dielectric layer; and semiconductor light-emitting elements loaded in the cell, wherein the assembly electrodes include a metal electrode part formed of a metal material and a transparent electrode part formed of a transparent material.

公开(公告)号：EP4050657A1

公开(公告)日：2022-08-31

申请号：EP19949870.0

申请日：2019-10-22

Applicant: LG Electronics Inc.

Inventor： KIM, Dohan ,  KWON, Jeonghyo ,  KIM, Soohyun ,  CHUNG, Indo

IPC: H01L27/15 ,  H01L21/768 ,  H01L33/00 ,  H01L33/38

Abstract: The present disclosure provides a novel form of a display device which enables semiconductor light emitting elements having a vertical structure to be assembled onto a substrate and then wiring process to be performed stably without any change to the position of the elements during post-processing. The display device according to one embodiment of the present disclosure comprises: a substrate; a pair of assembly electrodes positioned on the substrate; a dielectric layer positioned on the assembly electrodes; a wiring electrode positioned on the dielectric layer and comprising a base electrode part and a low melting point junction; a partition wall which overlaps with a portion of the wiring electrode, is positioned on the dielectric layer, and defines an assembly groove to which a semiconductor light emitting element is assembled; and the vertical semiconductor light emitting element which is assembled in the assembly groove and is electrically connected to the low melting point junction of the wiring electrode, wherein the low melting point junction has a flow stop angle for controlling the thermal flow characteristic of the junction.