公开(公告)号：EP4539088A1

公开(公告)日：2025-04-16

申请号：EP22946948.1

申请日：2022-06-14

Applicant: LG Electronics Inc.

Inventor： KIM, Jinah ,  YIM, Jeongsoon ,  LEE, Byungkee ,  LEE, Giwon ,  NAM, Hyojin ,  HONG, Eunju ,  PARK, Hyungjo

IPC: H01J35/18 ,  H01J35/04 ,  H01J35/06 ,  A61B6/06

Abstract: The present disclosure relates to an X-ray generating apparatus capable of providing an X-ray image and an X-ray system using the same, including: a field emitting part having a plurality of electron beam emitting regions arranged; an X-ray generating part generating X-rays by collision with electrons emitted from the field emitting part; and, a collimator transmitting X-rays generated from the X-ray generating part in a specific direction, in which a plurality of through-holes are arranged on the collimator to transmit the X-rays in a specific direction, and the X-ray can be blocked in a region other than the through-hole.

公开(公告)号：EP4539087A1

公开(公告)日：2025-04-16

申请号：EP22946958.0

申请日：2022-06-17

Applicant: LG Electronics Inc.

Inventor： KIM, Jinah ,  LEE, Byungkee ,  LEE, Giwon ,  NAM, Hyojin ,  YIM, Jeongsoon ,  HONG, Eunju ,  PARK, Hyungjo

IPC: H01J35/04 ,  H01J35/06 ,  H01J35/18 ,  H01J1/304 ,  H01J1/46

Abstract: The present disclosure relates to a field emission device that generates X-rays by emitting an electron beam, and an X-ray generating apparatus using the same, including a semiconductor substrate; a bottom electrode disposed below the semiconductor substrate; an insulating layer disposed above the semiconductor substrate; a gate electrode disposed on the insulating layer; and, a top electrode disposed on the gate electrode; wherein the gate electrode is composed of a material satisfying at least one of a first condition for work function, a second condition for Gibbs free energy of a redox reaction with the insulating layer, a third condition for sublimation energy, and a fourth condition for electron mean free path.

公开(公告)号：EP3524970A1

公开(公告)日：2019-08-14

申请号：EP16918373.8

申请日：2016-11-18

Applicant: LG Electronics Inc.

Inventor： HWANG, Insung ,  LEE, Byungkee ,  JANG, Yunguk ,  KIM, Sunjung

IPC: G01N27/414 ,  G01N25/32

Abstract: A sensor is disclosed. The sensor according to an embodiment of the present invention may include a substrate; a first electrode pattern disposed on one side of the substrate to form a layer; a second electrode pattern disposed on the one side of the substrate to form a layer and separated from the first electrode pattern; a sensing layer located on the one side of the substrate and covering the first electrode pattern and the second electrode pattern and containing a semiconductor; a protective layer located on the one side of the substrate and covering at least a part of the sensing layer, and containing a material different from that of the sensing layer; a first electrode pad disposed on the one side of the substrate to form a layer and electrically connected to the first electrode pattern; a second electrode pad disposed on the one side of the substrate and electrically connected to the second electrode pattern; and a housing accommodating the substrate and including a filter spaced apart from the substrate, wherein the substrate includes an opening formed adjacent to an outer boundary of the first and second electrode patterns.