中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

8 records (took 0.027 seconds)

    Fabrication method for back-contact heterojunction solar cell
    2.
    发明公开
    Fabrication method for back-contact heterojunction solar cell 有权
    Herstellungsverfahrenfürrückseitigkontakierte Solarzelle mitHeteroübergang

    公开(公告)号：EP2903037A1

    公开(公告)日：2015-08-05

    申请号：EP14004257.3

    申请日：2014-12-17

    Applicant: LG Electronics Inc.

    Inventor： LEE, Yujin ,  JI, Kwangsun ,  LEE, Seungjik ,  AHN, Sehwon

    IPC: H01L31/0745 ,  H01L31/0368 ,  H01L31/18 ,  H01L31/20

    CPC classification number: H01L31/022458 ,  H01L31/0312 ,  H01L31/03685 ,  H01L31/03765 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/1804 ,  H01L31/1824 ,  H01L31/202 ,  H01L31/208 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

    Abstract: A solar cell and a method for manufacturing the same are discussed. The method for manufacturing the solar cell includes forming an amorphous silicon layer on a back surface of a crystalline semiconductor substrate containing impurities of a first conductive type, performing a first diffusion process for diffusing impurities of a second conductive type opposite the first conductive type into a portion of the amorphous silicon layer to form an emitter region, and performing a second diffusion process for diffusing impurities of the first conductive type into a remaining portion except the portion of the amorphous silicon layer having the impurities of the second conductive type to form a back surface field region. When at least one of the first diffusion process and the second diffusion process is performed, the amorphous silicon layer is crystallized to form a silicon layer.

    Abstract translation: 讨论太阳能电池及其制造方法。 制造太阳能电池的方法包括在含有第一导电类型的杂质的结晶半导体衬底的背面上形成非晶硅层，进行用于将与第一导电类型相反的第二导电类型的杂质扩散到第一导电类型的第一扩散工艺 并且进行第二扩散处理，用于将第一导电类型的杂质扩散到除了具有第二导电类型的杂质的非晶硅层的部分之外的剩余部分中以形成背面 表面场区域。 当执行第一扩散处理和第二扩散处理中的至少一个时，非晶硅层被结晶以形成硅层。

    SOLAR CELL
    5.
    发明公开
    SOLAR CELL 审中-公开
    太阳能电池

    公开(公告)号：EP3018716A1

    公开(公告)日：2016-05-11

    申请号：EP15003142.5

    申请日：2015-11-03

    Applicant: LG Electronics Inc.

    Inventor： LEE, Yujin ,  CHUNG, Jinwon

    IPC: H01L31/0224 ,  H01L31/0328 ,  H01L31/0352 ,  H01L31/074 ,  H01L31/18

    CPC classification number: H01L31/02167 ,  H01L31/022441 ,  H01L31/0328 ,  H01L31/035272 ,  H01L31/03682 ,  H01L31/074 ,  H01L31/075 ,  H01L31/186 ,  Y02E10/50 ,  Y02P70/521

    Abstract: A solar cell is discussed. The solar cell according to an embodiment includes a semiconductor substrate containing impurities of a first conductive type, a metal oxide layer positioned on the semiconductor substrate, an emitter region positioned on the metal oxide layer and having a second conductive type opposite the first conductive type, a first electrode connected to the emitter region, and a second electrode connected to the semiconductor substrate.

    Abstract translation: 讨论太阳能电池。 根据实施例的太阳能电池包括含有第一导电类型的杂质的半导体衬底，位于半导体衬底上的金属氧化物层，位于金属氧化物层上且具有与第一导电类型相反的第二导电类型的发射极区域， 连接到发射极区的第一电极和连接到半导体衬底的第二电极。

    SOLAR CELL AND METHOD OF MANUFACTURING THE SAME
    8.
    发明公开
    SOLAR CELL AND METHOD OF MANUFACTURING THE SAME 审中-公开
    太阳能电池及其制造方法

    公开(公告)号：EP3193376A1

    公开(公告)日：2017-07-19

    申请号：EP17151203.1

    申请日：2017-01-12

    Applicant: LG ELECTRONICS INC.

    Inventor： LEE, Yujin ,  CHUNG, Jinwon ,  JI, Kwangsun

    IPC: H01L31/0224 ,  H01L31/0368 ,  H01L31/068 ,  H01L31/18

    CPC classification number: H01L31/0682 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/036 ,  H01L31/0368 ,  H01L31/1872 ,  Y02E10/547 ,  Y02P70/521

    Abstract: Disclosed is a solar cell including a semiconductor substrate, a protective-film layer formed over one surface of the semiconductor substrate, a first conductive area disposed over the protective-film layer, the first conductive area being of a first conductive type and including a crystalline semiconductor, and a first electrode electrically connected to the first conductive area. The first conductive area includes a first portion disposed over the protective-film layer and having a first crystal grain size, and a second portion disposed over the first portion and having a second crystal grain size, which is greater than the first crystal grain size.

    Abstract translation: 本发明公开了一种太阳能电池，该太阳能电池包括半导体衬底，形成在半导体衬底的一个表面上的保护膜层，设置在保护膜层上的第一导电区域，第一导电区域为第一导电类型并且包括结晶 半导体，以及电连接到第一导电区域的第一电极。 第一导电区域包括设置在保护膜层上并且具有第一晶粒尺寸的第一部分和设置在第一部分上方且具有比第一晶粒尺寸大的第二晶粒尺寸的第二部分。

Patent Agency Ranking