Abstract:
The present invention relates to a display device and a method for manufacturing the same, and more particularly, to a display device using a semiconductor light emitting device having a size of several µm to several tens of µm. The present invention provides a display device including a substrate, a wiring electrode disposed on the substrate, a plurality of semiconductor light emitting devices electrically connected to the wiring electrode, an anisotropic conductive layer disposed between the semiconductor light emitting devices and made of a mixture of conductive particles and an insulating material, and a light-transmitting layer formed between the semiconductor light emitting devices. The plurality of semiconductor light emitting devices includes first semiconductor light emitting devices emitting a first color and second semiconductor light emitting devices emitting a second color different from the first color. Also, the present invention provides the display device characterized in that the first and second semiconductor light emitting devices are alternately disposed with each other.
Abstract:
A display device including a substrate including a wiring electrode; a conductive adhesive layer including an anisotropic conductive medium, and disposed to cover the wiring electrode; and a plurality of semiconductor light emitting devices adhered to the conductive adhesive layer and electrically connected to the wiring electrode through the anisotropic conductive medium. Further, the conductive adhesive layer includes a first layer disposed on the substrate; a second layer deposited on the first layer and including the anisotropic conductive medium; and a third layer deposited on the second layer, to which the semiconductor light emitting devices are adhered. Further, at least one of the second layer and the third layer includes a white pigment configured to reflect light emitted by the semiconductor light emitting device.
Abstract:
The present invention provides a display device including a substrate, a wiring electrode disposed on the substrate, and a plurality of semiconductor light emitting devices electrically connected to the wiring electrode, an anisotropic conductive layer disposed between the semiconductor light emitting devices and made of a mixture of conductive particles and an insulating material, and a light transmitting layer formed between the semiconductor light emitting devices. And the anisotropic conductive layer is formed in plurality, and any one of the plurality of anisotropic conductive layers is formed to surround one semiconductor light emitting device or to surround a plurality of semiconductor light emitting devices adjacent to each other.
Abstract:
Disclosed in the present specification is a micro LED display device, and a manufacturing method therefor, the method forming, in advance, an anisotropic conductive adhesive paste layer only on a conductive electrode part of a semiconductor light emitting element and on a peripheral part thereof, and then transferring the anisotropic conductive adhesive paste layer to a wiring substrate, thereby simultaneously performing a transfer step and a stable wiring step.
Abstract:
The embodiment relates to a semiconductor light emitting device and a display device including the same. Semiconductor light emitting device according to the embodiment includes a light emitting structure 151 including a first conductivity type semiconductor layer 151a, an active layer 151b, and a second conductivity type semiconductor layer 151c, a first pad electrode 153A electrically connected to the first conductivity type semiconductor layer, a second pad electrode 153B electrically connected to the second conductivity type semiconductor layer, a first pattern structure 154A disposed on the first pad electrode and a second pattern structure 154B disposed on the second pad electrode.