公开(公告)号：KR20070119899A

公开(公告)日：2007-12-21

申请号：KR20060054441

申请日：2006-06-16

Applicant: LG PHILIPS LCD CO LTD

Inventor： CHA SEUNG HWAN ,  CHAE GEE SUNG ,  LEE BO HYUN

IPC: G02F1/136

CPC classification number: G02F1/136286 ,  G02F2001/136231 ,  H01L27/124 ,  H01L29/786

Abstract: A thin film transistor, a fabrication method thereof, an LCD using the same, and a fabrication method thereof are provided to improve mobility of carriers and remove a need for an additional process for crystallization by using a nanowire for a semiconductor layer. A gate electrode(111) is formed on a predetermined portion on a substrate(110). A gate dielectric layer(112) is formed on the entire substrate including the gate electrode. A semiconductor layer(120) is formed on the gate electrode on the gate dielectric layer, and is formed of a nano material. A fixing plate(121) is formed at a central portion on the semiconductor layer. A source electrode(130) and a drain electrode(131) are formed at a predetermined interval at both sides of the semiconductor layer. The nano material is one of a nanowire, a nanocable, and a nanotube.

Abstract translation: 提供薄膜晶体管，其制造方法，使用该薄膜晶体管的制造方法及其制造方法，以提高载流子的迁移率，并且通过使用半导体层的纳米线来消除对结晶的附加工艺的需要。 栅电极（111）形成在基板（110）上的预定部分上。 在包括栅电极的整个基板上形成栅介质层（112）。 半导体层（120）形成在栅极电介质层上的栅电极上，并由纳米材料形成。 在半导体层的中央部形成有固定板（121）。 在半导体层的两侧以预定的间隔形成源电极（130）和漏电极（131）。 纳米材料是纳米线，纳米线和纳米管之一。

公开(公告)号：JP2008010860A

公开(公告)日：2008-01-17

申请号：JP2007147198

申请日：2007-06-01

Applicant: Lg Philips Lcd Co Ltd ,  エルジー フィリップス エルシーディー カンパニー リミテッド

Inventor： CHAE GEE SUNG ,  CHA SEUNG HWAN

IPC: H01L21/336 ,  H01L21/20 ,  H01L29/786

CPC classification number: H01L29/66765 ,  H01L27/1255 ,  H01L27/1285 ,  H01L27/1288 ,  H01L27/1292 ,  H01L29/41733

Abstract: PROBLEM TO BE SOLVED: To provide a thin film transistor whose manufacturing process is simplified by forming the polysilicon channel layer of the thin film transistor making use of liquid silicon, and to provide its fabrication method. SOLUTION: This thin film transistor includes a gate electrode, a gate insulation film formed on the gate electrode, source and drain electrodes formed on the gate insulation film, a doping layer formed on the whole surface of the source and drain electrodes, and a polysilicon channel layer formed on the gate insulation film and the doping layer between the source and drain electrodes. The doping layer is formed in the region that overlaps with the channel layer. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 解决的问题：提供通过使用液态硅形成薄膜晶体管的多晶硅沟道层来简化制造工艺的薄膜晶体管，并提供其制造方法。 该薄膜晶体管包括栅电极，形成在栅极电极上的栅极绝缘膜，形成在栅极绝缘膜上的源极和漏极，形成在源极和漏极的整个表面上的掺杂层， 以及形成在栅极绝缘膜和源极和漏极之间的掺杂层的多晶硅沟道层。 掺杂层形成在与沟道层重叠的区域中。 版权所有（C）2008，JPO＆INPIT