公开(公告)号：US6423973B2

公开(公告)日：2002-07-23

申请号：US75024400

申请日：2000-12-29

Applicant: LG PHILIPS LCD CO LTD

Inventor： CHOO KYO-SEOP ,  PARK JUNE-HO

IPC: H04N5/32 ,  G01T1/24 ,  H01L21/331 ,  H01L27/146

CPC classification number: H01L27/14665 ,  H01L27/14696

Abstract: An X-ray image sensor fabricated using eight-mask steps. A thin film transistor (TFT) having a gate electrode, a first insulation layer, pure and doped amorphous silicon layers, and source and drain electrodes is on a substrate. An island-shaped first insulation layer, semiconductor layer, and ground line are also formed. A second insulation layer having a first drain contact hole and a ground line contact hole covers the TFT, the substrate, and the ground line. An auxiliary drain electrode on the second insulation layer contacts the drain electrode through the first drain contact hole. A capacitor electrode on the second insulation layer contacts the ground line through the ground line contact hole. A third insulation layer having a second drain contact hole that exposes the auxiliary drain is on the second insulation layer, the auxiliary drain electrode, and the capacitor electrode. A pixel electrode on the third insulation layer contacts the auxiliary drain electrode through the second drain contact hole.

Abstract translation: 使用八个掩模步骤制造的X射线图像传感器。 具有栅电极，第一绝缘层，纯和掺杂非晶硅层以及源极和漏极的薄膜晶体管（TFT）在衬底上。 还形成岛状的第一绝缘层，半导体层和接地线。 具有第一漏极接触孔和接地线接触孔的第二绝缘层覆盖TFT，基板和接地线。 第二绝缘层上的辅助漏电极通过第一漏极接触孔接触漏电极。 第二绝缘层上的电容电极通过接地线接触孔接触地线。 具有暴露辅助漏极的第二漏极接触孔的第三绝缘层位于第二绝缘层，辅助漏电极和电容器电极上。 第三绝缘层上的像素电极通过第二漏极接触孔接触辅助漏电极。