公开(公告)号：US20030202131A1

公开(公告)日：2003-10-30

申请号：US10397261

申请日：2003-03-27

Applicant: LG Philips LCD Co., Ltd.

Inventor： Byung-Chul Ahn ,  Soon-Sung Yoo ,  Yong-Wan Kim

IPC: G02F001/136

CPC classification number: G02F1/13458 ,  G02F1/136213 ,  G02F1/136227

Abstract: A liquid crystal display, and a method of manufacturing thereof, includes providing a substrate; depositing sequentially a first metal layer and a first insulating layer on the substrate; patterning the first metal layer and the first insulating layer using a first mask to form a gate line and a first gate insulating layer; depositing sequentially a second gate insulating layer, a pure semiconductor layer, a doped semiconductor layer and a second metal layer over the whole substrate; patterning the second metal layer using a second mask to form a data line, source and drain electrodes, a capacitor electrode, the capacitor electrode overlapping a portion of the gae line; etching the doped semiconductor layer between the source and drain electrodes to form a channel region; depositing a third insulating layer over the whole substrate; patterning the third insulating layer using a third mask to form a passivation film, the passivation film having a smaller width than the data line and covering the source and drain electrodes and exposing a portion of the drain electrode and the capacitor electrode; depositing a transparent conductive material layer over the whole substrate; and patterning the transparent conductive material layer using a fourth mask to pixel electrode, the pixel electrode contacting the drain electrode.

Abstract translation: 液晶显示器及其制造方法包括提供基板; 在基板上依次沉积第一金属层和第一绝缘层; 使用第一掩模对第一金属层和第一绝缘层进行构图以形成栅极线和第一栅极绝缘层; 在整个衬底上依次沉积第二栅绝缘层，纯半导体层，掺杂半导体层和第二金属层; 使用第二掩模图案化第二金属层以形成数据线，源极和漏极，电容器电极，电容器电极与gae线的一部分重叠; 蚀刻源极和漏极之间的掺杂半导体层以形成沟道区; 在整个衬底上沉积第三绝缘层; 使用第三掩模对第三绝缘层进行图案化以形成钝化膜，所述钝化膜具有比所述数据线更小的宽度并且覆盖所述源电极和漏电极并暴露所述漏电极和所述电容器电极的一部分; 在整个基板上沉积透明导电材料层; 以及使用第四掩模到像素电极对所述透明导电材料层进行图案化，所述像素电极与所述漏极接触。

公开(公告)号：US20030214613A1

公开(公告)日：2003-11-20

申请号：US10459456

申请日：2003-06-12

Applicant: LG. PHILIPS LCD CO. , LTD.

Inventor： Byung-Chul Ahn ,  Soon-Sung Yoo ,  Yong-Wan Kim ,  Keuk-Sang Kwon

IPC: G02F001/136

CPC classification number: G02F1/1362 ,  G02F2001/136231

Abstract: The present invention discloses an array substrate for an active-matrix LCD device and a method of fabricating the same. The array substrate reduces the number of masks used in the fabrication process so that reliability is enhanced and the cost is reduced over the conventional device and method.

公开(公告)号：US20020009838A1

公开(公告)日：2002-01-24

申请号：US09940504

申请日：2001-08-29

Applicant: LG. Philips LCD Co., Ltd.

Inventor： Byung-Chul Ahn ,  Hyun-Sik Seo

IPC: H01L021/00 ,  H01L021/84

CPC classification number: H01L29/42384 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78636

Abstract: A thin-film transistor includes a substrate, and a gate including a double-layered structure having first and second metal layers provided on the substrate, the first metal layer being wider than the second metal layer by 1 to 4 nullm. A method of making such a thin-film transistor includes the steps of: depositing a first metal layer on a substrate, depositing a second metal layers directly on the first metal layer; forming a photoresist having a designated width on the second metal layer; patterning the second metal layer via isotropic etching using the photoresist as a mask; patterning the first metal layer by means of an anisotropic etching using the photoresist as a mask, the first metal layer being etched to have the designated width, thus forming a gate having a laminated structure of the first and second metal layers; and removing the photoresist.

Abstract translation: 薄膜晶体管包括基板和包括具有设置在基板上的第一和第二金属层的双层结构的栅极，第一金属层比第二金属层宽1至4微米。 制造这种薄膜晶体管的方法包括以下步骤：在衬底上沉积第一金属层，将第二金属层直接沉积在第一金属层上; 在所述第二金属层上形成具有指定宽度的光致抗蚀剂; 通过使用光致抗蚀剂作为掩模的各向同性蚀刻图案化第二金属层; 通过使用光致抗蚀剂作为掩模的各向异性蚀刻图案化第一金属层，第一金属层被蚀刻成具有指定的宽度，从而形成具有第一和第二金属层的层叠结构的栅极; 并去除光致抗蚀剂。