Method for fabricating thin film transistor-liquid crystal display
    1.
    发明申请
    Method for fabricating thin film transistor-liquid crystal display 有权
    薄膜晶体管液晶显示器的制造方法

    公开(公告)号:US20020192883A1

    公开(公告)日:2002-12-19

    申请号:US10029388

    申请日:2001-12-28

    CPC classification number: G02F1/13458 G02F1/136204 G02F1/136227

    Abstract: A method for fabricating thin film transistor-LCD is disclosed, wherein a pixel electrode and a gate metal in a cutting region of a pad part can be eliminated through two steps of etching in the same process. In a method for fabricating an LCD device provided with an active region where a plurality of gate lines are arranged to cross a plurality of data lines so as to define a pixel region, and a cutting region between a pad part of the gate line and a shorting bar, the method includes the steps of a first stage of forming gate line including a gate electrode in the active region on a substrate and forming a gate metal pattern for connecting the gate line and the shorting bar in the cutting region; a second stage of forming an insulating film on the entire surface of the active and cutting regions; a third stage of forming a TFT provided with source and drain electrodes in the active region; a fourth stage of depositing a passivation film on the entire surface of the active region and forming a contact hole at a drain electrode of the TFT and the gate metal pattern; a fifth stage of forming a transparent electrode for electrically connecting to the drain electrode through contact hole; a sixth stage of selectively etching the transparent electrode so that only a pixel electrode remains in the active region and the gate metal pattern is exposed in the cutting region; and a seventh stage of eliminating the gate metal pattern.

    Abstract translation: 公开了一种用于制造薄膜晶体管-LCD的方法,其中可以通过在相同工艺中的两个蚀刻步骤来消除焊盘部分的切割区域中的像素电极和栅极金属。 在制造具有有源区域的LCD器件的方法中,其中多个栅极线布置成跨越多个数据线以限定像素区域,并且栅极线的焊盘部分和栅极线之间的切割区域 该方法包括以下步骤:在基板上的有源区域中形成栅极线的第一阶段,并形成用于连接切割区域中的栅极线和短路棒的栅极金属图案; 在活动和切割区域的整个表面上形成绝缘膜的第二阶段; 在有源区中形成设置有源极和漏极的TFT的第三阶段; 第四阶段在有源区的整个表面上沉积钝化膜,并在TFT和栅极金属图案的漏电极处形成接触孔; 形成用于通过接触孔电连接到漏电极的透明电极的第五阶段; 选择性地蚀刻透明电极的第六阶段,使得只有像素电极保留在有源区域中,并且栅极金属图案在切割区域中露出; 以及消除栅极金属图案的第七阶段。

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