Abstract:
A method for fabricating thin film transistor-LCD is disclosed, wherein a pixel electrode and a gate metal in a cutting region of a pad part can be eliminated through two steps of etching in the same process. In a method for fabricating an LCD device provided with an active region where a plurality of gate lines are arranged to cross a plurality of data lines so as to define a pixel region, and a cutting region between a pad part of the gate line and a shorting bar, the method includes the steps of a first stage of forming gate line including a gate electrode in the active region on a substrate and forming a gate metal pattern for connecting the gate line and the shorting bar in the cutting region; a second stage of forming an insulating film on the entire surface of the active and cutting regions; a third stage of forming a TFT provided with source and drain electrodes in the active region; a fourth stage of depositing a passivation film on the entire surface of the active region and forming a contact hole at a drain electrode of the TFT and the gate metal pattern; a fifth stage of forming a transparent electrode for electrically connecting to the drain electrode through contact hole; a sixth stage of selectively etching the transparent electrode so that only a pixel electrode remains in the active region and the gate metal pattern is exposed in the cutting region; and a seventh stage of eliminating the gate metal pattern.