公开(公告)号：US20030183820A1

公开(公告)日：2003-10-02

申请号：US10396333

申请日：2003-03-26

Applicant: LG. Philips LCD Co., Ltd.

Inventor： Yong-In Park ,  Sang-Gul Lee ,  Jae-Beom Choi ,  Jong-Hoon Yi

IPC: H01L029/76

CPC classification number: H01L27/124 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/66757 ,  H01L29/66765

Abstract: A thin film transistor having a source/drain electrode on an insulating substrate is provided with a metal oxide layer interposed between a source/drain electrode and a metal connecting line. The formation of the metal oxide layer prevents the occurrence of the galvanic phenomenon.

公开(公告)号：US20030162338A1

公开(公告)日：2003-08-28

申请号：US10400567

申请日：2003-03-28

Applicant: LG. PHILIPS LCD CO., LTD.

Inventor： Eui-Hoon Hwang ,  Sang-Gul Lee

IPC: H01L021/00 ,  H01L021/84

CPC classification number: H01L29/66757 ,  H01L29/78621

Abstract: An object of the present invention is to crystallize and activate the doped amorphous semiconductor layer at the same time. It is also an object to provide the TFT with good electrical connection between the source or drain electrodes and the semiconductor layer. The inventive method of fabricating TFT for a liquid crystal display device, includes forming a buffer layer on a substrate; forming an amorphous semiconductor layer on the whole buffer layer, the semiconductor layer having a channel region and source and drain ohmic contact regions, each positioned at opposing ends of the channel region; doping nnull(or pnull) ions on the source and drain ohmic contact regions of the semiconductor layer while covering the channel region with a photoresist; patterning the semiconductor layer to have an island shape, the island shape including the channel region and the source and drain ohmic contact regions; irradiating laser beams on the semiconductor layer having the island shape, thereby crystallizing and activating the semiconductor layer; forming a first insulating layer on the semiconductor layer; forming a gate electrode on the first insulating layer; forming a second insulating layer on the first insulating layer while covering the gate electrode; forming source and drain contact holes penetrating both the first and second insulating layers to the source and drain ohmic contact regions of the semiconductor layer, respectively; and forming the source and drain electrodes on the second insulating layer, while the source and drain electrodes having electrical connection to the source and drain ohmic contact regions of the semiconductor layer.

Abstract translation: 本发明的目的是同时结晶和活化掺杂的非晶半导体层。 本发明的另一个目的是提供TFT在源电极或漏电极与半导体层之间的良好电连接。 制造用于液晶显示装置的TFT的本发明的方法包括在衬底上形成缓冲层; 在整个缓冲层上形成非晶半导体层，所述半导体层具有沟道区和源极和漏极欧姆接触区，每个位于沟道区的相对端; 在半导体层的源极和漏极欧姆接触区域上掺杂n +（或p +）离子，同时用光致抗蚀剂覆盖沟道区域; 将半导体层图形化为岛状，该岛状包括沟道区和源极和漏极欧姆接触区; 在具有岛状的半导体层上照射激光束，从而使半导体层结晶并起作用; 在所述半导体层上形成第一绝缘层; 在所述第一绝缘层上形成栅电极; 在覆盖所述栅电极的同时在所述第一绝缘层上形成第二绝缘层; 形成分别将所述第一和第二绝缘层穿过所述半导体层的源极和漏极欧姆接触区域的源极和漏极接触孔; 以及在所述第二绝缘层上形成所述源极和漏极，同时所述源极和漏极与所述半导体层的所述源极和漏极欧姆接触区域电连接。